Transistor - Bipolare (BJT) - RF

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus TransistorType Voltage-CollectorEmitterBreakdown(Max) Frequency-Transition NoiseFigure(dBTyp@f) Gain Power-Max DCCurrentGain(hFE)(Min)@IcVce Current-Collector(Ic)(Max) OperatingTemperature MountingType
2N5583

2N5583

PNP SIL RF TO39

Solid State Inc.
3,745 -

RFQ

2N5583

Scheda tecnica

Box - Active PNP 30V 1.3GHz - - 1W 25 @ 100mA, 2V 500mA -65°C ~ 200°C (TJ) Through Hole
2N3501

2N3501

BI-POLAR SILICON TRANSISTOR NPN

Solid State Inc.
3,552 -

RFQ

Bulk - Active NPN 150V 150MHz - - 1W 100 @ 150mA, 10V 300mA -65°C ~ 200°C (TJ) Through Hole
2N3500

2N3500

SILICON TRANSISTOR NPN TO-39

Solid State Inc.
2,619 -

RFQ

2N3500

Scheda tecnica

Bulk - Active NPN 150V 150MHz - - 1W 40 @ 150mA, 10V 300mA -65°C ~ 200°C (TJ) Through Hole
2N3499

2N3499

SILICON TRANSISTOR NPN TO-39

Solid State Inc.
3,931 -

RFQ

2N3499

Scheda tecnica

Bulk - Active NPN 100V 150MHz - - 1W 100 @ 150mA, 10V 500mA -65°C ~ 200°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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