Transistor - Bipolare (BJT) - Singolo, Pre-polarizzati

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) Resistor-Base(R1) Resistor-EmitterBase(R2) DCCurrentGain(hFE)(Min)@IcVce VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) Frequency-Transition Power-Max MountingType
GN1L4M-T2-A

GN1L4M-T2-A

SMALL SIGNAL BIPOLAR TRANSISTOR

Renesas Electronics America Inc
2,651 -

RFQ

GN1L4M-T2-A

Scheda tecnica

Bulk - Obsolete PNP - Pre-Biased 100 mA 50 V 47 kOhms 47 kOhms 95 @ 50mA, 5V 200mV @ 250µA, 5mA 100nA (ICBO) - 150 mW Surface Mount
GA1L4M-T2-A

GA1L4M-T2-A

SMALL SIGNAL BIPOLAR TRANSISTOR

Renesas Electronics America Inc
2,215 -

RFQ

GA1L4M-T2-A

Scheda tecnica

Bulk - Obsolete NPN - Pre-Biased 100 mA 50 V 47 kOhms 47 kOhms 95 @ 50mA, 5V 200mV @ 250µA, 5mA 100nA (ICBO) - 150 mW Surface Mount
2SD1697-AZ

2SD1697-AZ

SMALL SIGNAL BIPOLAR TRANSISTOR

Renesas Electronics America Inc
3,933 -

RFQ

2SD1697-AZ

Scheda tecnica

Bulk - Active NPN - Pre-Biased 800 mA 80 V 1 kOhms - 4000 @ 300mA, 2V 1.2V @ 1mA, 500mA 1µA (ICBO) - 1 W Through Hole
FA4F4M-T1B-A

FA4F4M-T1B-A

PROGRAM ADAPTER

Renesas Electronics America Inc
2,071 -

RFQ

FA4F4M-T1B-A

Scheda tecnica

Box - Obsolete NPN - Pre-Biased 100 mA 50 V 22 Ohms 22 Ohms 60 @ 50mA, 5V 200mV @ 250µ, 5mA 100nA (ICBO) - 200 mW -
FN4L4M-T1B-A

FN4L4M-T1B-A

PROGRAM ADAPTER

Renesas Electronics America Inc
2,693 -

RFQ

FN4L4M-T1B-A

Scheda tecnica

Box - Obsolete NPN - Pre-Biased 100 mA 50 V 22 Ohms 22 Ohms 85 @ 5mA, 5V 200mV @ 250µ, 5mA 100nA (ICBO) - 200 mW -
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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