Transistor - Bipolare (BJT) - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SA812B-T1B-AT

2SA812B-T1B-AT

2SA812B-T1B-AT - PNP SILICON EPI

Renesas
3,142 -

RFQ

Bulk - Obsolete PNP 100 mA 50 V 300mV @ 10mA, 100mA 100nA (ICBO) 90 @ 1mA, 6V 200 mW 180MHz 150°C (TJ) Surface Mount
2SA1836-T1-A

2SA1836-T1-A

2SA1836-T1-A - PNP SILICON EPITA

Renesas
2,183 -

RFQ

Bulk - Obsolete PNP 100 mA 50 V 300mV @ 10mA, 100mA 100nA (ICBO) 90 @ 1mA, 6V 200 mW 180MHz 150°C (TJ) Surface Mount
2SA952-T-A

2SA952-T-A

2SA952 - SMALL SIGNAL BIPOLAR TR

Renesas
2,258 -

RFQ

2SA952-T-A

Scheda tecnica

Bulk * Active - - - - - - - - - -
2SC3380ASTR-E

2SC3380ASTR-E

2SC3380ASTR - SILICON NPN TRIPLE

Renesas
2,449 -

RFQ

Bulk - Obsolete NPN 100 mA 300 V 1.5V @ 2mA, 20mA 1µA 30 @ 20mA, 20V 1 W 80MHz 150°C (TJ) Surface Mount
2SC4942-T1-AZ

2SC4942-T1-AZ

2SC4942-T1-AZ - NPN SILICON TRIP

Renesas
2,232 -

RFQ

Bulk - Obsolete NPN 1 A 600 V 1V @ 80mA, 400mA 10µA (ICBO) 30 @ 100mA, 5V 2 W 30MHz 150°C (TJ) Surface Mount
2SA1871-T1-AZ

2SA1871-T1-AZ

2SA1871-T1-AZ - PNP SILICON TRIP

Renesas
2,594 -

RFQ

Bulk - Obsolete PNP 1 A 600 V 1V @ 60mA, 300mA 10µA (ICBO) 30 @ 100mA, 5V 2 W 30MHz 150°C (TJ) Surface Mount
2SB1261(1)-AZ

2SB1261(1)-AZ

2SB1261 - PNP SILICON EPITAXIAL

Renesas
2,244 -

RFQ

Bulk - Obsolete PNP 3 A 60 V 300mV @ 150mA, 1.5A 10µA (ICBO) 100 @ 600mA, 2V 2 W 50MHz 150°C (TJ) Surface Mount
2SC4942-AZ

2SC4942-AZ

2SC4942-AZ - NPN SILICON TRIPLE

Renesas
2,253 -

RFQ

Bulk - Obsolete NPN 1 A 600 V 1V @ 80mA, 400mA 10µA (ICBO) 30 @ 100mA, 5V 2 W 30MHz 150°C (TJ) Surface Mount
2SD1579-T-AZ

2SD1579-T-AZ

2SD1579-T-AZ - SMALL SIGNAL BIPO

Renesas
3,202 -

RFQ

Bulk - Obsolete NPN - Darlington 1.5 A 80 V 1.5V @ 1mA, 1A 1mA 2000 @ 1A, 2V 1 W 60MHz 150°C (TJ) Through Hole
2SB601-AZ

2SB601-AZ

2SB601 - PNP SILICON EPITAXIAL T

Renesas
3,506 -

RFQ

Bulk - Obsolete PNP - Darlington 5 A 100 V 1.5V @ 3mA, 3A 10µA 2000 @ 3A, 2V 1.5 W - 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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