Transistor - FET, MOSFET - Array

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
PAA12400BM3

PAA12400BM3

1200V HALF-BRIDGE

PN Junction Semiconductor
3,047 -

RFQ

PAA12400BM3

Scheda tecnica

Tray - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 350A 7.3mOhm @ 300A, 20V 5V @ 100mA - 29.5pF @ 1000V - -40°C ~ 175°C (TJ) Chassis Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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