Transistor - FET, MOSFET - Array

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
GE12047BCA3

GE12047BCA3

1200V 475A SiC Dual Module

General Electric
3,268 -

RFQ

GE12047BCA3

Scheda tecnica

Box SiC Power Active 2 Independent Silicon Carbide (SiC) 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) Chassis Mount
GE12047CCA3

GE12047CCA3

1200V 475A SIC HALF-BRIDGE MODUL

General Electric
2,313 -

RFQ

GE12047CCA3

Scheda tecnica

Box SiC Power Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) Chassis Mount
GE17042CCA3

GE17042CCA3

1700V 425A SIC HALF-BRIDGE MODUL

General Electric
2,741 -

RFQ

GE17042CCA3

Scheda tecnica

Bulk - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 18V 29100pF @ 900V 1250W 175°C (TJ) Chassis Mount
GE17042BCA3

GE17042BCA3

1700V 425A SIC DUAL MODULE

General Electric
3,101 -

RFQ

GE17042BCA3

Scheda tecnica

Bulk - Active 2 N-Channel (Dual) Silicon Carbide (SiC) 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 18V 29100pF @ 900V 1250W 175°C (TJ) Chassis Mount
GE17045EEA3

GE17045EEA3

1700V 425A SiC Six-Pack Module

General Electric
3,747 -

RFQ

GE17045EEA3

Scheda tecnica

Bulk SiC Power Active 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W (Tc) -55°C ~ 150°C (Tc) Chassis Mount
GE17080CDA3

GE17080CDA3

1700V 765A SIC HALF-BRIDGE MODUL

General Electric
2,637 -

RFQ

GE17080CDA3

Scheda tecnica

Bulk SiC Power Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 765A 2.23mOhm @ 765A, 20V 4.5V @ 160mA 2414nC @ 18V 58000pF @ 900V 2350W -55°C ~ 150°C (Tc) Chassis Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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