Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2N6661

2N6661

MOSFET N-CH 90V 900MA TO39

Solid State Inc.
880 -

RFQ

2N6661

Scheda tecnica

Box - Active N-Channel MOSFET (Metal Oxide) 90 V 900mA (Tc) 5V, 10V 4mOhm @ 1A, 10V 2V @ 1mA - ±40V 50 pF @ 25 V - 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6660

2N6660

MOSFET N-CH 60V 1.1A TO39

Solid State Inc.
770 -

RFQ

2N6660

Scheda tecnica

Box - Active N-Channel MOSFET (Metal Oxide) 60 V 1.1A (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±40V 50 pF @ 25 V - 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ50A

BUZ50A

TO 220 HV N-CHANNEL MOSFET

Solid State Inc.
2,768 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) - - - - - - - - - - - Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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