Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FBG20N18BC

FBG20N18BC

GAN FET HEMT200V18A COTS 4FSMD-B

EPC Space, LLC
2,590 -

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 200 V 18A (Tc) 5V 26mOhm @ 18A, 5V 2.5V @ 3mA 6 nC @ 5 V +6V, -4V 900 pF @ 100 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG10N30BC

FBG10N30BC

GAN FET HEMT100V30A COTS 4FSMD-B

EPC Space, LLC
2,189 -

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 100 V 30A (Tc) 5V 9mOhm @ 30A, 5V 2.5V @ 5mA 11 nC @ 5 V +6V, -4V 1000 pF @ 50 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG10N05AC

FBG10N05AC

GAN FET HEMT 100V5A COTS 4FSMD-A

EPC Space, LLC
3,427 -

RFQ

FBG10N05AC

Scheda tecnica

Tray - Active N-Channel GaNFET (Gallium Nitride) 100 V 5A (Tc) 5V 44mOhm @ 5A, 5V 2.5V @ 1.2mA 2.2 nC @ 5 V +6V, -4V 233 pF @ 50 V - - -55°C ~ 150°C (TJ) Surface Mount
EPC7014UBC

EPC7014UBC

GAN FET HEMT 60V 1A COTS 4UB

EPC Space, LLC
3,816 -

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 60 V 1A (Tc) 5V 580mOhm @ 1A, 5V 2.5V @ 140µA - +7V, -4V 22 pF @ 30 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG04N08AC

FBG04N08AC

GAN FET HEMT 40V 8A COTS 4FSMD-A

EPC Space, LLC
121 -

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 40 V 8A (Tc) 5V 24mOhm @ 8A, 5V 2.5V @ 2mA 2.8 nC @ 5 V +6V, -4V 312 pF @ 20 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG04N30BC

FBG04N30BC

GAN FET HEMT 40V30A COTS 4FSMD-B

EPC Space, LLC
3,478 -

RFQ

FBG04N30BC

Scheda tecnica

Tray FSMD-B Active N-Channel GaNFET (Gallium Nitride) 40 V 30A (Tc) 5V 9mOhm @ 30A, 5V 2.5V @ 9mA 11.4 nC @ 5 V +6V, -4V 1300 pF @ 20 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG30N04CC

FBG30N04CC

GAN FET HEMT 300V4A COTS 4FSMD-C

EPC Space, LLC
3,246 -

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 300 V 4A (Tc) 5V 404mOhm @ 4A, 5V 2.8V @ 600µA 2.6 nC @ 5 V +6V, -4V 450 pF @ 150 V - - -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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