Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK44N50F

IXFK44N50F

MOSFET N-CH 500V 44A TO264

IXYS-RF
2,395 -

RFQ

IXFK44N50F

Scheda tecnica

Tube HiPerRF™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 120mOhm @ 22A, 10V 5.5V @ 4mA 156 nC @ 10 V ±20V 5500 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXRFSM12N100

IXRFSM12N100

MOSFET N-CH 1000V 12A 16SMPD

IXYS-RF
3,244 -

RFQ

Tube SMPD Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 15V 1.05Ohm @ 6A, 15V 5.5V @ 250µA 77 nC @ 10 V ±20V 2875 pF @ 800 V - 940W -55°C ~ 150°C (TJ) Surface Mount
IXRFSM18N50

IXRFSM18N50

MOSFET N-CH 500V 19A 16SMPD

IXYS-RF
3,689 -

RFQ

Tube SMPD Obsolete N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 20V 340mOhm @ 9.5A, 20V 6.5V @ 250µA 42 nC @ 10 V ±20V 2250 pF @ 400 V - 835W -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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