Transistor - IGBT - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
WG50N65DHWQ

WG50N65DHWQ

IGBT TRENCH FD ST 650V 91A TO247

WeEn Semiconductors
3,855 -

RFQ

WG50N65DHWQ

Scheda tecnica

Tube - Active Trench Field Stop 650 V 91 A 200 A 2V @ 15V, 50A 278 W 1.7mJ (on), 600µJ (off) Standard 160 nC 66ns/163ns 400V, 50A, 10Ohm, 15V 105 ns -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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