Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GSIB2560NL-01M3/P

GSIB2560NL-01M3/P

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,431 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.5 A 1 V @ 12.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2580-5401E3/45

GSIB2580-5401E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,552 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.5 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2580-5402E3/45

GSIB2580-5402E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,469 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.5 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB660L-5700E3/45

GSIB660L-5700E3/45

BRIDGE RECT 1P 600V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,690 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 2.8 A 950 mV @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB6A60L-802E3/45

GSIB6A60L-802E3/45

BRIDGE RECT 1P 600V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,042 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 2.8 A 1 V @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB6A60L-803E3/45

GSIB6A60L-803E3/45

BRIDGE RECT 1P 600V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,141 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 2.8 A 1 V @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
MBL108S-01M3/I

MBL108S-01M3/I

BRIDGE RECT 1PHASE 800V 1A 4SMD

Vishay General Semiconductor - Diodes Division
2,577 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 1 A 950 mV @ 400 mA 5 µA @ 800 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
BU10065S-M3/45

BU10065S-M3/45

DIODE BRIDGE 10A 600V

Vishay General Semiconductor - Diodes Division
3,369 -

RFQ

Tape & Reel (TR) - Obsolete Single Phase Standard 600 V 3.2 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU-5S
BU2010L-7001M3/51

BU2010L-7001M3/51

DIODE BRIDGE 20A 1000V

Vishay General Semiconductor - Diodes Division
3,363 -

RFQ

Tape & Reel (TR) - Obsolete Single Phase Standard 1 kV 3.5 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2010L-7001E3/51

BU2010L-7001E3/51

DIODE BRIDGE 20A 1000V

Vishay General Semiconductor - Diodes Division
2,705 -

RFQ

Tape & Reel (TR) - Obsolete Single Phase Standard 1 kV 3.5 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
LVE2560-M3R/P

LVE2560-M3R/P

DIODE BRIDGE

Vishay General Semiconductor - Diodes Division
3,074 -

RFQ

LVE2560-M3R/P

Scheda tecnica

Tape & Reel (TR) - Obsolete Single Phase Standard 600 V 25 A 920 mV @ 12.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
G2SB20-M3/45

G2SB20-M3/45

DIODE BRIDGE GBL

Vishay General Semiconductor - Diodes Division
2,137 -

RFQ

G2SB20-M3/45

Scheda tecnica

Tape & Reel (TR) - Obsolete Single Phase Standard 200 V 1.5 A 1 V @ 750 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA02-M3/45

GBLA02-M3/45

DIODE BRIDGE 200V GBL

Vishay General Semiconductor - Diodes Division
3,463 -

RFQ

GBLA02-M3/45

Scheda tecnica

Tube - Obsolete Single Phase Standard 200 V 4 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G2SB80-M3/45

G2SB80-M3/45

DIODE BRIDGE

Vishay General Semiconductor - Diodes Division
2,903 -

RFQ

G2SB80-M3/45

Scheda tecnica

Tape & Reel (TR) - Obsolete Single Phase Standard 800 V 1.5 A 1 V @ 750 mA 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA02-M3/51

GBLA02-M3/51

DIODE BRIDGE 200V GBL

Vishay General Semiconductor - Diodes Division
2,127 -

RFQ

GBLA02-M3/51

Scheda tecnica

Tray - Obsolete Single Phase Standard 200 V 4 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G2SB20-M3/51

G2SB20-M3/51

DIODE BRIDGE GBL

Vishay General Semiconductor - Diodes Division
3,926 -

RFQ

G2SB20-M3/51

Scheda tecnica

Tape & Reel (TR) - Obsolete Single Phase Standard 200 V 1.5 A 1 V @ 750 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G2SB60-E3D/P

G2SB60-E3D/P

DIODE BRIDGE

Vishay General Semiconductor - Diodes Division
3,247 -

RFQ

Tape & Reel (TR) - Obsolete Single Phase Standard 600 V 1.5 A 1 V @ 750 mA 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
Total 1397 Record«Prev1... 6667686970Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente