Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBI20J

GBI20J

1BRect, 600V, 20A

Diotec Semiconductor
3,323 -

RFQ

GBI20J

Scheda tecnica

Box - Active Single Phase Standard 600 V 3.6 A 1.1 V @ 10 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI20M

GBI20M

1BRect, 1000V, 20A

Diotec Semiconductor
2,057 -

RFQ

GBI20M

Scheda tecnica

Box - Active Single Phase Standard 1 kV 3.6 A 1.1 V @ 10 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI25D

GBI25D

1BRect, 200V, 25A

Diotec Semiconductor
2,315 -

RFQ

GBI25D

Scheda tecnica

Box - Active Single Phase Standard 200 V 4.2 A 1.1 V @ 12.5 A 5 µA @ 200 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI25G

GBI25G

1BRect, 400V, 25A

Diotec Semiconductor
3,406 -

RFQ

GBI25G

Scheda tecnica

Box - Active Single Phase Standard 400 V 4.2 A 1.1 V @ 12.5 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI25J

GBI25J

1BRect, 600V, 25A

Diotec Semiconductor
2,085 -

RFQ

GBI25J

Scheda tecnica

Box - Active Single Phase Standard 600 V 4.2 A 1.1 V @ 12.5 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI25M

GBI25M

1BRect, 1000V, 25A

Diotec Semiconductor
2,204 -

RFQ

GBI25M

Scheda tecnica

Box - Active Single Phase Standard 1 kV 4.2 A 1.1 V @ 12.5 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBU12M

GBU12M

1BRect, 1000V, 12A

Diotec Semiconductor
2,767 -

RFQ

GBU12M

Scheda tecnica

Box - Active Single Phase Standard 1 kV 8.4 A 1 V @ 12 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU12K

GBU12K

1BRect, 800V, 12A

Diotec Semiconductor
3,222 -

RFQ

GBU12K

Scheda tecnica

Box - Active Single Phase Standard 800 V 8.4 A 1 V @ 12 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU12B

GBU12B

1BRect, 100V, 12A

Diotec Semiconductor
3,809 -

RFQ

GBU12B

Scheda tecnica

Box - Active Single Phase Standard 100 V 8.4 A 1 V @ 12 A 5 µA @ 100 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU12G

GBU12G

1BRect, 400V, 12A

Diotec Semiconductor
3,381 -

RFQ

GBU12G

Scheda tecnica

Box - Active Single Phase Standard 400 V 8.4 A 1 V @ 12 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU12J

GBU12J

1BRect, 600V, 12A

Diotec Semiconductor
3,475 -

RFQ

GBU12J

Scheda tecnica

Box - Active Single Phase Standard 600 V 8.4 A 1 V @ 12 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
B40C3700A

B40C3700A

1BRect, 80V, 3.7A

Diotec Semiconductor
3,026 -

RFQ

B40C3700A

Scheda tecnica

Box - Active Single Phase Standard 80 V 2.7 A 1 V @ 3 A 5 µA @ 80 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
B80C3700A

B80C3700A

1BRect, 160V, 3.7A

Diotec Semiconductor
3,893 -

RFQ

B80C3700A

Scheda tecnica

Box - Active Single Phase Standard 160 V 2.7 A 1 V @ 3 A 5 µA @ 160 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
B40C5000A

B40C5000A

1BRect, 80V, 5A

Diotec Semiconductor
2,388 -

RFQ

B40C5000A

Scheda tecnica

Box - Active Single Phase Standard 80 V 4 A 1 V @ 5 A 5 µA @ 80 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
B40C7000A

B40C7000A

1BRect, 80V, 7A

Diotec Semiconductor
2,262 -

RFQ

B40C7000A

Scheda tecnica

Box - Active Single Phase Standard 80 V 4.8 A 1 V @ 5 A 5 µA @ 80 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
B80C5000A

B80C5000A

1BRect, 160V, 5A

Diotec Semiconductor
2,145 -

RFQ

B80C5000A

Scheda tecnica

Box - Active Single Phase Standard 160 V 4 A 1 V @ 5 A 5 µA @ 160 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
B80C7000A

B80C7000A

1BRect, 160V, 7A

Diotec Semiconductor
3,940 -

RFQ

B80C7000A

Scheda tecnica

Box - Active Single Phase Standard 160 V 4.8 A 1 V @ 5 A 5 µA @ 160 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
B380C3700A

B380C3700A

1BRect, 800V, 3.7A

Diotec Semiconductor
3,711 -

RFQ

B380C3700A

Scheda tecnica

Box - Active Single Phase Standard 800 V 2.7 A 1 V @ 3 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
B125C7000A

B125C7000A

1BRect, 250V, 7A

Diotec Semiconductor
3,266 -

RFQ

B125C7000A

Scheda tecnica

Box - Active Single Phase Standard 250 V 4.8 A 1 V @ 5 A 5 µA @ 250 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
B380C7000A

B380C7000A

1BRect, 800V, 7A

Diotec Semiconductor
2,508 -

RFQ

B380C7000A

Scheda tecnica

Box - Active Single Phase Standard 800 V 4.8 A 1 V @ 5 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
Total 581 Record«Prev1... 1112131415161718...30Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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