Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBJ2006-F

GBJ2006-F

BRIDGE RECT 1PHASE 600V 20A GBJ

Diodes Incorporated
2,872 -

RFQ

GBJ2006-F

Scheda tecnica

Tube - Active Single Phase Standard 600 V 20 A 1.05 V @ 10 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ1510-F

GBJ1510-F

BRIDGE RECT 1PHASE 1KV 15A GBJ

Diodes Incorporated
2,951 -

RFQ

GBJ1510-F

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 15 A 1.05 V @ 7.5 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
BR1006SG-G

BR1006SG-G

BRIDGE RECT 1PHASE 600V 10A BR-8

Comchip Technology
2,136 -

RFQ

BR1006SG-G

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Chassis Mount 4-Square, BR-8
MP1004G-G

MP1004G-G

BRIDGE RECT 1PHASE 400V 10A MP8

Comchip Technology
3,831 -

RFQ

MP1004G-G

Scheda tecnica

Tray - Active Single Phase Standard 400 V 10 A 1.1 V @ 5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, MP-8
MP1010G-G

MP1010G-G

BRIDGE RECT 1PHASE 1KV 10A MP8

Comchip Technology
2,744 -

RFQ

MP1010G-G

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, MP-8
GBJ2510-F

GBJ2510-F

BRIDGE RECT 1PHASE 1KV 25A GBJ

Diodes Incorporated
2,228 -

RFQ

GBJ2510-F

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 25 A 1.05 V @ 12.5 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GSIB1560-E3/45

GSIB1560-E3/45

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,909 -

RFQ

GSIB1560-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 3.5 A 950 mV @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB1580-E3/45

GSIB1580-E3/45

BRIDGE RECT 1P 800V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,858 -

RFQ

GSIB1580-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 15 A 950 mV @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GBPC606-E4/51

GBPC606-E4/51

BRIDGE RECT 1PHASE 600V 3A GBPC6

Vishay General Semiconductor - Diodes Division
930 -

RFQ

GBPC606-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 3 A 1 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-6
GBU8B

GBU8B

BRIDGE RECT 1PHASE 100V 8A GBU

onsemi
2,566 -

RFQ

GBU8B

Scheda tecnica

Tube - Active Single Phase Standard 100 V 8 A 1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
TS25P07G

TS25P07G

BRIDGE RECT 1PHASE 1KV 25A TS-6P

Taiwan Semiconductor Corporation
3,254 -

RFQ

TS25P07G

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 25 A 1.1 V @ 1.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
GBPC2506-BP

GBPC2506-BP

BRIDGE RECT 1PHASE 600V 25A GBPC

Micro Commercial Co
2,575 -

RFQ

GBPC2506-BP

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GSIB2560-E3/45

GSIB2560-E3/45

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,110 -

RFQ

GSIB2560-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 600 V 3.5 A 1 V @ 12.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2580-E3/45

GSIB2580-E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,824 -

RFQ

GSIB2580-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 3.5 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
VS-KBPC804PBF

VS-KBPC804PBF

BRIDGE RECT 1PHASE 400V 8A D-72

Vishay General Semiconductor - Diodes Division
3,792 -

RFQ

VS-KBPC804PBF

Scheda tecnica

Bulk VS-KBPC8 Active Single Phase Standard 400 V 8 A 1 V @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-72
GBPC3508W-BP

GBPC3508W-BP

35ABRIDGE RECTIFIERGBPC-W

Micro Commercial Co
3,488 -

RFQ

GBPC3508W-BP

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
TS50P07G

TS50P07G

BRIDGE RECT 1PHASE 1KV 50A TS-6P

Taiwan Semiconductor Corporation
2,063 -

RFQ

TS50P07G

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 50 A 1.1 V @ 1.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
BU2506-E3/51

BU2506-E3/51

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,850 -

RFQ

BU2506-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
PB3506-E3/45

PB3506-E3/45

BRIDGE RECT 1P 600V 35A PB

Vishay General Semiconductor - Diodes Division
3,062 -

RFQ

PB3506-E3/45

Scheda tecnica

Tube isoCink+™ Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, PB
PB3508-E3/45

PB3508-E3/45

BRIDGE RECT 1P 800V 35A PB

Vishay General Semiconductor - Diodes Division
3,761 -

RFQ

PB3508-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, PB
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