Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBPC3501T

KBPC3501T

BRIDGE RECT 1PHASE 100V 35A KBPC

GeneSiC Semiconductor
3,810 -

RFQ

KBPC3501T

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 35 A 1.1 V @ 17.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
KBPC3502T

KBPC3502T

BRIDGE RECT 1PHASE 200V 35A KBPC

GeneSiC Semiconductor
2,322 -

RFQ

KBPC3502T

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
KBPC3504T

KBPC3504T

BRIDGE RECT 1PHASE 400V 35A KBPC

GeneSiC Semiconductor
2,181 -

RFQ

KBPC3504T

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
KBPC3506T

KBPC3506T

BRIDGE RECT 1PHASE 600V 35A KBPC

GeneSiC Semiconductor
3,937 -

RFQ

KBPC3506T

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
KBPC3508T

KBPC3508T

BRIDGE RECT 1PHASE 800V 35A KBPC

GeneSiC Semiconductor
3,141 -

RFQ

KBPC3508T

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
KBPC35005W

KBPC35005W

BRIDGE RECT 1P 50V 35A KBPC-W

GeneSiC Semiconductor
3,896 -

RFQ

KBPC35005W

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 35 A 1.1 V @ 17.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, KBPC-W
KBPC3501W

KBPC3501W

BRIDGE RECT 1P 100V 35A KBPC-W

GeneSiC Semiconductor
2,056 -

RFQ

KBPC3501W

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 35 A 1.1 V @ 17.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Square, KBPC-W
KBPC3502W

KBPC3502W

BRIDGE RECT 1P 200V 35A KBPC-W

GeneSiC Semiconductor
2,594 -

RFQ

KBPC3502W

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 35 A 1.1 V @ 17.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, KBPC-W
KBPC3504W

KBPC3504W

BRIDGE RECT 1P 400V 35A KBPC-W

GeneSiC Semiconductor
2,799 -

RFQ

KBPC3504W

Scheda tecnica

Bulk - Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, KBPC-W
KBPC3506W

KBPC3506W

BRIDGE RECT 1P 600V 35A KBPC-W

GeneSiC Semiconductor
2,215 -

RFQ

KBPC3506W

Scheda tecnica

Bulk - Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, KBPC-W
KBPC3508W

KBPC3508W

BRIDGE RECT 1P 800V 35A KBPC-W

GeneSiC Semiconductor
2,678 -

RFQ

KBPC3508W

Scheda tecnica

Bulk - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, KBPC-W
KBPC3510T

KBPC3510T

BRIDGE RECT 1P 1KV 35A KBPC-T

GeneSiC Semiconductor
2,746 -

RFQ

KBPC3510T

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
KBPC3510W

KBPC3510W

BRIDGE RECT 1P 1KV 35A KBPC-W

GeneSiC Semiconductor
3,695 -

RFQ

KBPC3510W

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, KBPC-W
GBPC35010T

GBPC35010T

BRIDGE RECT 1PHASE 1KV 35A GBPC

GeneSiC Semiconductor
2,236 -

RFQ

Bulk - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC25005T

GBPC25005T

BRIDGE RECT 1PHASE 50V 25A GBPC

GeneSiC Semiconductor
2,371 -

RFQ

GBPC25005T

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 25 A 1.1 V @ 7.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC2501T

GBPC2501T

BRIDGE RECT 1PHASE 100V 25A GBPC

GeneSiC Semiconductor
2,261 -

RFQ

GBPC2501T

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 25 A 1.1 V @ 12.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC2502T

GBPC2502T

BRIDGE RECT 1PHASE 200V 25A GBPC

GeneSiC Semiconductor
2,192 -

RFQ

GBPC2502T

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 25 A 1.1 V @ 12.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC25005W

GBPC25005W

BRIDGE RECT 1P 50V 25A GBPC-W

GeneSiC Semiconductor
2,177 -

RFQ

GBPC25005W

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 25 A 1.1 V @ 7.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2501W

GBPC2501W

BRIDGE RECT 1P 50V 25A GBPC-W

GeneSiC Semiconductor
2,310 -

RFQ

GBPC2501W

Scheda tecnica

Bulk - Active Single Phase Standard 50 V 25 A 1.1 V @ 12.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2510T

GBPC2510T

BRIDGE RECT 1PHASE 1KV 25A GBPC

GeneSiC Semiconductor
3,020 -

RFQ

GBPC2510T

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC
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