Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
2KBP08M-23E4/51

2KBP08M-23E4/51

BRIDGE RECT 1PHASE 800V 2A KBPM

Vishay General Semiconductor - Diodes Division
3,429 -

RFQ

2KBP08M-23E4/51

Scheda tecnica

Tray - Obsolete Single Phase Standard 800 V 2 A 1.1 V @ 3.14 A 5 µA @ 800 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP08M-E4/72

2KBP08M-E4/72

BRIDGE RECT 1PHASE 800V 2A KBPM

Vishay General Semiconductor - Diodes Division
2,237 -

RFQ

2KBP08M-E4/72

Scheda tecnica

Bulk - Obsolete Single Phase Standard 800 V 2 A 1.1 V @ 3.14 A 5 µA @ 800 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP08ML-24E4/51

2KBP08ML-24E4/51

BRIDGE RECT 1PHASE 800V 2A KBPM

Vishay General Semiconductor - Diodes Division
2,899 -

RFQ

Tray - Obsolete Single Phase Standard 800 V 2 A 1.1 V @ 3.14 A 5 µA @ 800 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP08ML-6581E4/72

2KBP08ML-6581E4/72

BRIDGE RECT 1PHASE 800V 2A KBPM

Vishay General Semiconductor - Diodes Division
3,784 -

RFQ

Bulk - Obsolete Single Phase Standard 800 V 2 A 1.1 V @ 3.14 A 5 µA @ 800 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP08ML-7001E4/72

2KBP08ML-7001E4/72

BRIDGE RECT 1PHASE 800V 2A KBPM

Vishay General Semiconductor - Diodes Division
2,225 -

RFQ

Bulk - Obsolete Single Phase Standard 800 V 2 A 1.1 V @ 3.14 A 5 µA @ 800 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP10M-28E4/51

2KBP10M-28E4/51

BRIDGE RECT 1PHASE 1KV 2A KBPM

Vishay General Semiconductor - Diodes Division
3,771 -

RFQ

2KBP10M-28E4/51

Scheda tecnica

Tray - Obsolete Single Phase Standard 1 kV 2 A 1.1 V @ 3.14 A 5 µA @ 1000 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP10M-E4/72

2KBP10M-E4/72

BRIDGE RECT 1PHASE 1KV 2A KBPM

Vishay General Semiconductor - Diodes Division
2,179 -

RFQ

2KBP10M-E4/72

Scheda tecnica

Tray - Obsolete Single Phase Standard 1 kV 2 A 1.1 V @ 3.14 A 5 µA @ 1000 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP10ML-001E4/51

2KBP10ML-001E4/51

BRIDGE RECT 1PHASE 1KV 2A KBPM

Vishay General Semiconductor - Diodes Division
3,582 -

RFQ

Tray - Obsolete Single Phase Standard 1 kV 2 A 1.1 V @ 3.14 A 5 µA @ 1000 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP10ML-5/22

2KBP10ML-5/22

BRIDGE RECT 1PHASE 1KV 2A KBPM

Vishay General Semiconductor - Diodes Division
3,372 -

RFQ

Bulk - Obsolete Single Phase Standard 1 kV 2 A 1.1 V @ 3.14 A 5 µA @ 1000 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP10ML-5E4/51

2KBP10ML-5E4/51

BRIDGE RECT 1PHASE 1KV 2A KBPM

Vishay General Semiconductor - Diodes Division
2,117 -

RFQ

Tray - Obsolete Single Phase Standard 1 kV 2 A 1.1 V @ 3.14 A 5 µA @ 1000 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP10ML-5E4/72

2KBP10ML-5E4/72

BRIDGE RECT 1PHASE 1KV 2A KBPM

Vishay General Semiconductor - Diodes Division
2,466 -

RFQ

Bulk - Obsolete Single Phase Standard 1 kV 2 A 1.1 V @ 3.14 A 5 µA @ 1000 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP10ML-6767E4/51

2KBP10ML-6767E4/51

BRIDGE RECT 1PHASE 1KV 2A KBPM

Vishay General Semiconductor - Diodes Division
3,980 -

RFQ

Tray - Obsolete Single Phase Standard 1 kV 2 A 1.1 V @ 3.14 A 5 µA @ 1000 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
GBL204HD2G

GBL204HD2G

BRIDGE RECT 1PHASE 400V 2A GBL

Taiwan Semiconductor Corporation
2,502 -

RFQ

GBL204HD2G

Scheda tecnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 400 V 2 A 1 V @ 2 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL205HD2G

GBL205HD2G

BRIDGE RECT 1PHASE 600V 2A GBL

Taiwan Semiconductor Corporation
2,571 -

RFQ

GBL205HD2G

Scheda tecnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 2 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL206HD2G

GBL206HD2G

BRIDGE RECT 1PHASE 800V 2A GBL

Taiwan Semiconductor Corporation
3,347 -

RFQ

GBL206HD2G

Scheda tecnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 2 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL207HD2G

GBL207HD2G

BRIDGE RECT 1PHASE 1KV 2A GBL

Taiwan Semiconductor Corporation
3,021 -

RFQ

GBL207HD2G

Scheda tecnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 2 A 1 V @ 2 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA005 D2G

GBLA005 D2G

BRIDGE RECT 1PHASE 50V 4A GBL

Taiwan Semiconductor Corporation
3,065 -

RFQ

GBLA005 D2G

Scheda tecnica

Tube - Discontinued at Mosen Single Phase Standard 50 V 4 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
2KBP10ML-6767E4/72

2KBP10ML-6767E4/72

BRIDGE RECT 1PHASE 1KV 2A KBPM

Vishay General Semiconductor - Diodes Division
2,263 -

RFQ

Bulk - Obsolete Single Phase Standard 1 kV 2 A 1.1 V @ 3.14 A 5 µA @ 1000 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
2KBP10ML-7001E4/51

2KBP10ML-7001E4/51

BRIDGE RECT 1PHASE 1KV 2A KBPM

Vishay General Semiconductor - Diodes Division
2,121 -

RFQ

Tray - Obsolete Single Phase Standard 1 kV 2 A 1.1 V @ 3.14 A 5 µA @ 1000 V -55°C ~ 165°C (TJ) Through Hole 4-SIP, KBPM
3KBP005M-E4/72

3KBP005M-E4/72

BRIDGE RECT 1PHASE 50V 3A KBPM

Vishay General Semiconductor - Diodes Division
3,814 -

RFQ

3KBP005M-E4/72

Scheda tecnica

Bulk - Obsolete Single Phase Standard 50 V 3 A 1.05 V @ 3 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBPM
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1500+ Media giornaliera RFQ
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1800+ Produttori mondiali
15,000+
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