Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU12A

GBU12A

1PH BRIDGE GBU 50V 12A

Diotec Semiconductor
3,811 -

RFQ

GBU12A

Scheda tecnica

Box - Active Single Phase Standard 50 V 8.4 A 1 V @ 12 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU12A-T

GBU12A-T

1PH BRIDGE GBU 50V 12A

Diotec Semiconductor
2,268 -

RFQ

GBU12A-T

Scheda tecnica

Tube - Active Single Phase Standard 50 V 8.4 A 1 V @ 12 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBI35M

GBI35M

1PH BRIDGE 30X20X3.6 1000V 35A

Diotec Semiconductor
3,906 -

RFQ

GBI35M

Scheda tecnica

Box - Active Single Phase Standard 1 kV 5 A 1.1 V @ 17.5 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
B500C3700A

B500C3700A

1PH BRIDGE 30X20X3.6 1000V 3.7A

Diotec Semiconductor
2,728 -

RFQ

B500C3700A

Scheda tecnica

Box - Active Single Phase Standard 1 kV 2.7 A 1 V @ 3 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
GBI40K

GBI40K

1PH BRIDGE 30X20X3.6 800V 40A

Diotec Semiconductor
3,921 -

RFQ

GBI40K

Scheda tecnica

Box - Active Single Phase Standard 800 V 6 A 1.1 V @ 20 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI40M

GBI40M

1PH BRIDGE 30X20X3.6 1000V 40A

Diotec Semiconductor
500 -

RFQ

GBI40M

Scheda tecnica

Box - Active Single Phase Standard 1 kV 6 A 1.1 V @ 20 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBU807

GBU807

BRIDGE RECT 1PHASE 1KV 8A GBU

Taiwan Semiconductor Corporation
3,419 -

RFQ

GBU807

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 8 A 1 V @ 1.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
B250C7000A

B250C7000A

1PH BRIDGE 30X20X3.6 600V 7A

Diotec Semiconductor
3,333 -

RFQ

B250C7000A

Scheda tecnica

Box - Active Single Phase Standard 600 V 4.8 A 1 V @ 5 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
B380C5000A

B380C5000A

1PH BRIDGE 30X20X3.6 800V 5A

Diotec Semiconductor
2,409 -

RFQ

B380C5000A

Scheda tecnica

Box - Active Single Phase Standard 800 V 4 A 1 V @ 5 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
NTE5303

NTE5303

R-BRIDGE 1000V 8 AMP SIP

NTE Electronics, Inc
2,047 -

RFQ

NTE5303

Scheda tecnica

Bag - Active Single Phase Standard 1 kV 8 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBU1007

GBU1007

BRIDGE RECT 1PHASE 1KV 10A GBU

Taiwan Semiconductor Corporation
3,006 -

RFQ

GBU1007

Scheda tecnica

Tube - Active Single Phase Standard 1 kV 10 A 1.1 V @ 1.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
NTE5332

NTE5332

R-SI BRIDGE 600V 1A

NTE Electronics, Inc
2,889 -

RFQ

NTE5332

Scheda tecnica

Bag - Active Single Phase Standard 600 V 1 A 1.2 V @ 1 A 10 µA @ 600 V -65°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
B380C7000A

B380C7000A

1PH BRIDGE 30X20X3.6 800V 7A

Diotec Semiconductor
3,427 -

RFQ

B380C7000A

Scheda tecnica

Box - Active Single Phase Standard 800 V 4.8 A 1 V @ 5 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP
CS20D

CS20D

1PH BRIDGE DIL 40V 1A

Diotec Semiconductor
2,468 -

RFQ

CS20D

Scheda tecnica

Tube,Tube - Active Single Phase Schottky 40 V 1 A 500 mV @ 1 A 500 µA @ 40 V -50°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
CS10D

CS10D

1PH BRIDGE DIL 20V 1A

Diotec Semiconductor
2,057 -

RFQ

CS10D

Scheda tecnica

Tube,Tube - Active Single Phase Schottky 20 V 1 A 500 mV @ 1 A 500 µA @ 20 V -50°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
CS40D

CS40D

1PH BRIDGE DIL 80V 1A

Diotec Semiconductor
2,884 -

RFQ

CS40D

Scheda tecnica

Tube,Tube - Active Single Phase Schottky 80 V 1 A 790 mV @ 1 A 500 µA @ 80 V -50°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
CS30D

CS30D

1PH BRIDGE DIL 60V 1A

Diotec Semiconductor
2,248 -

RFQ

CS30D

Scheda tecnica

Tube,Tube - Active Single Phase Schottky 60 V 1 A 700 mV @ 1 A 500 µA @ 60 V -50°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
CS50D

CS50D

1PH BRIDGE DIL 100V 1A

Diotec Semiconductor
2,586 -

RFQ

CS50D

Scheda tecnica

Tube,Tube - Active Single Phase Schottky 100 V 1 A 790 mV @ 1 A 500 µA @ 100 V -50°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
NTE53010

NTE53010

R-BRIDGE 1000V 15A SIP

NTE Electronics, Inc
2,187 -

RFQ

NTE53010

Scheda tecnica

Bag - Active Single Phase Standard 1 kV 15 A 1.05 V @ 7.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBL06

GBL06

BRIDGE RECT 1PHASE 600V 4A GBL

Taiwan Semiconductor Corporation
3,177 -

RFQ

GBL06

Scheda tecnica

Tube - Active Single Phase Standard 600 V 4 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
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1500+ Media giornaliera RFQ
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1800+ Produttori mondiali
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