Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBL08-5300E3/51

GBL08-5300E3/51

BRIDGE RECT 1PHASE 800V 3A GBL

Vishay General Semiconductor - Diodes Division
3,354 -

RFQ

GBL08-5300E3/51

Scheda tecnica

Tube - Obsolete Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08L-5306E3/45

GBL08L-5306E3/45

BRIDGE RECT 1PHASE 800V 3A GBL

Vishay General Semiconductor - Diodes Division
3,460 -

RFQ

GBL08L-5306E3/45

Scheda tecnica

Tube - Obsolete Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08L-5701E3/45

GBL08L-5701E3/45

BRIDGE RECT 1PHASE 800V 3A GBL

Vishay General Semiconductor - Diodes Division
3,240 -

RFQ

GBL08L-5701E3/45

Scheda tecnica

Tube - Obsolete Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08L-5701E3/51

GBL08L-5701E3/51

BRIDGE RECT 1PHASE 800V 3A GBL

Vishay General Semiconductor - Diodes Division
3,817 -

RFQ

GBL08L-5701E3/51

Scheda tecnica

Tube - Obsolete Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08L-5701M3/45

GBL08L-5701M3/45

BRIDGE RECT 1PHASE 800V 3A GBL

Vishay General Semiconductor - Diodes Division
3,368 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08L-7000E3/45

GBL08L-7000E3/45

BRIDGE RECT 1PHASE 800V 3A GBL

Vishay General Semiconductor - Diodes Division
3,389 -

RFQ

GBL08L-7000E3/45

Scheda tecnica

Tube - Obsolete Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA06L-6985E3/45

GBLA06L-6985E3/45

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division
2,841 -

RFQ

GBLA06L-6985E3/45

Scheda tecnica

Tube - Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA06L-6985M3/45

GBLA06L-6985M3/45

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division
2,038 -

RFQ

GBLA06L-6985M3/45

Scheda tecnica

Tube - Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBU4A-1E3/51

GBU4A-1E3/51

BRIDGE RECT 1PHASE 50V 3A GBU

Vishay General Semiconductor - Diodes Division
3,665 -

RFQ

GBU4A-1E3/51

Scheda tecnica

Tube - Obsolete Single Phase Standard 50 V 3 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4A-1M3/51

GBU4A-1M3/51

BRIDGE RECT 1PHASE 50V 3A GBU

Vishay General Semiconductor - Diodes Division
2,210 -

RFQ

GBU4A-1M3/51

Scheda tecnica

Tube - Obsolete Single Phase Standard 50 V 3 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4DL-5303E3/45

GBU4DL-5303E3/45

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division
2,057 -

RFQ

GBU4DL-5303E3/45

Scheda tecnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4DL-5303E3/51

GBU4DL-5303E3/51

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division
3,653 -

RFQ

GBU4DL-5303E3/51

Scheda tecnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4DL-5303M3/45

GBU4DL-5303M3/45

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division
2,094 -

RFQ

GBU4DL-5303M3/45

Scheda tecnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4DL-5303M3/51

GBU4DL-5303M3/51

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division
3,511 -

RFQ

GBU4DL-5303M3/51

Scheda tecnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4DL-6419E3/45

GBU4DL-6419E3/45

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division
3,275 -

RFQ

GBU4DL-6419E3/45

Scheda tecnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4DL-6419E3/51

GBU4DL-6419E3/51

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division
3,841 -

RFQ

GBU4DL-6419E3/51

Scheda tecnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4DL-6419M3/45

GBU4DL-6419M3/45

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division
3,381 -

RFQ

GBU4DL-6419M3/45

Scheda tecnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4DL-6419M3/51

GBU4DL-6419M3/51

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division
3,383 -

RFQ

GBU4DL-6419M3/51

Scheda tecnica

Tube - Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4GL-6420E3/51

GBU4GL-6420E3/51

BRIDGE RECT 1PHASE 400V 3A GBU

Vishay General Semiconductor - Diodes Division
2,770 -

RFQ

GBU4GL-6420E3/51

Scheda tecnica

Tube - Obsolete Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4GL-6420M3/51

GBU4GL-6420M3/51

BRIDGE RECT 1PHASE 400V 3A GBU

Vishay General Semiconductor - Diodes Division
3,700 -

RFQ

GBU4GL-6420M3/51

Scheda tecnica

Tube - Obsolete Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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