Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
BR801

BR801

STD 8A, CASE TYPE: BR10

EIC SEMICONDUCTOR INC.
2,297 -

RFQ

BR801

Scheda tecnica

Bag - Active Single Phase Standard 100 V 8 A 1 V @ 4 A 10 µA @ 100 V -40°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
RS2505M

RS2505M

BRIDGE RECT GLASS 600V 25A RS25M

Rectron USA
300 -

RFQ

RS2505M

Scheda tecnica

Tube - Active Single Phase Standard 600 V 25 A 1 V @ 12.5 A 500 nA @ 600 V 150°C (TJ) Through Hole 4-SIP, RS-25M
RBV1004

RBV1004

BRIGDE RECTIFIER 10A 400V, CASE

EIC SEMICONDUCTOR INC.
3,504 -

RFQ

RBV1004

Scheda tecnica

Bag - Active Single Phase Standard 400 V 10 A 1 V @ 5 A 10 µA @ 400 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
FBR804

FBR804

FR 8A, CASE TYPE: BR10

EIC SEMICONDUCTOR INC.
200 -

RFQ

FBR804

Scheda tecnica

Bag - Active Single Phase Standard 400 V 8 A 1.3 V @ 4 A 10 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
GBU4M

GBU4M

1BRect, 1000V, 4A

Diotec Semiconductor
2,877 -

RFQ

GBU4M

Scheda tecnica

Box - Active Single Phase Standard 1 kV 2.8 A 1 V @ 4 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4K

GBU4K

1BRect, 800V, 4A

Diotec Semiconductor
2,631 -

RFQ

GBU4K

Scheda tecnica

Box - Active Single Phase Standard 800 V 2.8 A 1 V @ 4 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BR610

BR610

BRIDGE RECT 1000V 6A BR-6

Rectron USA
200 -

RFQ

BR610

Scheda tecnica

Tray - Active Single Phase Standard 1 kV 6 A 1.1 V @ 3 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, BR-6
GBU6A

GBU6A

1BRect, 50V, 6A

Diotec Semiconductor
2,641 -

RFQ

GBU6A

Scheda tecnica

Box - Active Single Phase Standard 50 V 4.2 A 1 V @ 6 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6D

GBU6D

1BRect, 200V, 6A

Diotec Semiconductor
3,313 -

RFQ

GBU6D

Scheda tecnica

Box - Active Single Phase Standard 200 V 4.2 A 1 V @ 6 A 5 µA @ 200 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
RBV1008

RBV1008

BRIGDE RECTIFIER 10A 800V, CASE

EIC SEMICONDUCTOR INC.
900 -

RFQ

RBV1008

Scheda tecnica

Bag - Active Single Phase Standard 800 V 10 A 1 V @ 5 A 10 µA @ 800 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
RBV1006

RBV1006

BRIGDE RECTIFIER 10A 600V, CASE

EIC SEMICONDUCTOR INC.
500 -

RFQ

RBV1006

Scheda tecnica

Bag - Active Single Phase Standard 600 V 10 A 1 V @ 5 A 10 µA @ 600 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
KBPC2510W

KBPC2510W

25 AMP BRIDGE RECTIFIER

Solid State Inc.
940 -

RFQ

KBPC2510W

Scheda tecnica

Bulk KBPC25 Active Single Phase Standard 1 kV 25 A 1.2 V @ 12.5 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) Through Hole 4-Square, KBPC-W
KBPC3510W

KBPC3510W

35 AMP BRIDGE RECTIFIER

Solid State Inc.
410 -

RFQ

KBPC3510W

Scheda tecnica

Bulk KBPC35 Active Single Phase Standard 1 kV 35 A 1.2 V @ 17.5 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) Through Hole 4-Square, KBPC-W
RBV1502

RBV1502

BRIGDE RECTIFIER 15A 200V, CASE

EIC SEMICONDUCTOR INC.
2,643 -

RFQ

RBV1502

Scheda tecnica

Bag - Active Single Phase Standard 200 V 15 A 1.1 V @ 7.5 A 10 µA @ 200 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
KBU810

KBU810

BRIDGE RECT GLASS 1000V 8A KBU

MDD
3,276 -

RFQ

KBU810

Scheda tecnica

Box KBU Active Single Phase Standard 1 kV 333 mA 1 V @ 4 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBU1010

KBU1010

BRIDGE RECT 1PHASE 1KV 10A KBU

MDD
2,450 -

RFQ

KBU1010

Scheda tecnica

Box KBU Active Single Phase Standard 1 kV 416 mA 1 V @ 5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
RBV2502

RBV2502

BRIGDE RECTIFIER 25A 200V, CASE

EIC SEMICONDUCTOR INC.
500 -

RFQ

RBV2502

Scheda tecnica

Bag - Active Single Phase Standard 200 V 25 A 1.1 V @ 12.5 A 10 µA @ 200 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
RBV1508

RBV1508

BRIGDE RECTIFIER 15A 800V, CASE

EIC SEMICONDUCTOR INC.
800 -

RFQ

RBV1508

Scheda tecnica

Bag - Active Single Phase Standard 800 V 15 A 1.1 V @ 7.5 A 10 µA @ 800 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
GBU8J

GBU8J

1BRect, 600V, 8A

Diotec Semiconductor
2,421 -

RFQ

GBU8J

Scheda tecnica

Box - Active Single Phase Standard 600 V 5.6 A 1 V @ 8 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K

GBU8K

1BRect, 800V, 8A

Diotec Semiconductor
2,756 -

RFQ

GBU8K

Scheda tecnica

Box - Active Single Phase Standard 800 V 5.6 A 1 V @ 8 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
Total 8096 Record«Prev1... 4950515253545556...405Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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