Diodi - Raddrizzatori a ponte

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
STBR1508B2Y-TR

STBR1508B2Y-TR

AUTOMOTIVE 800 V, 15 A BRIDGE RE

STMicroelectronics
3,399 -

RFQ

STBR1508B2Y-TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active Single Phase Standard 800 V 15 A 1.09 V @ 15 A 1 µA @ 800 V -40°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
DF1501S-E3/45

DF1501S-E3/45

BRIDGE RECT 1PHASE 100V 1.5A DFS

Vishay General Semiconductor - Diodes Division
2,861 -

RFQ

DF1501S-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 100 V 1.5 A 1.1 V @ 1.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
DFL1501S-E3/45

DFL1501S-E3/45

BRIDGE RECT 1PHASE 100V 1.5A DFS

Vishay General Semiconductor - Diodes Division
2,108 -

RFQ

DFL1501S-E3/45

Scheda tecnica

Tube - Active Single Phase Standard 100 V 1.5 A 1.1 V @ 1.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
DI108_T0_00001

DI108_T0_00001

DIP, GENERAL

Panjit International Inc.
3,956 -

RFQ

DI108_T0_00001

Scheda tecnica

Tube - Active Single Phase Standard 800 V 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
PMS310_R2_00601

PMS310_R2_00601

M4 PACKAGE, 3A/1000V LOW VF BRID

Panjit International Inc.
3,959 -

RFQ

Tube M4 Active Single Phase Standard 1 kV 3 A 1.05 V @ 1.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
VS-2KBP04

VS-2KBP04

BRIDGE RECT 1PHASE 400V 2A D-44

Vishay General Semiconductor - Diodes Division
3,470 -

RFQ

VS-2KBP04

Scheda tecnica

Bulk VS-2KBP Active Single Phase Standard 400 V 2 A 1 V @ 1 A 10 µA @ 400 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, D-44
GBJ1501-F

GBJ1501-F

BRIDGE RECT 1PHASE 100V 15A GBJ

Diodes Incorporated
3,425 -

RFQ

GBJ1501-F

Scheda tecnica

Tube - Active Single Phase Standard 100 V 15 A 1.05 V @ 7.5 A 10 µA @ 100 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ10005-F

GBJ10005-F

BRIDGE RECT 1PHASE 50V 10A GBJ

Diodes Incorporated
3,580 -

RFQ

GBJ10005-F

Scheda tecnica

Tube - Active Single Phase Standard 50 V 10 A 1.05 V @ 5 A 10 µA @ 50 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ1001-F

GBJ1001-F

BRIDGE RECT 1PHASE 100V 10A GBJ

Diodes Incorporated
2,988 -

RFQ

GBJ1001-F

Scheda tecnica

Tube - Active Single Phase Standard 100 V 10 A 1.05 V @ 5 A 10 µA @ 100 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ1006-F

GBJ1006-F

BRIDGE RECT 1PHASE 600V 10A GBJ

Diodes Incorporated
3,474 -

RFQ

GBJ1006-F

Scheda tecnica

Tube - Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 10 µA @ 600 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2506

GBJ2506

BRIDGE RECT 1PHASE 600V 25A GBJ

SMC Diode Solutions
2,961 -

RFQ

GBJ2506

Scheda tecnica

Tube - Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
BU1010A-E3/51

BU1010A-E3/51

BRIDGE RECT 1P 1KV 3A BU

Vishay General Semiconductor - Diodes Division
2,381 -

RFQ

BU1010A-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 3 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
VS-1KAB20E

VS-1KAB20E

BRIDGE RECT 1P 200V 1.2A D-38

Vishay General Semiconductor - Diodes Division
3,023 -

RFQ

VS-1KAB20E

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 1.2 A 1.1 V @ 1.2 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-38
VS-1KAB100E

VS-1KAB100E

BRIDGE RECT 1PHASE 1KV 1.2A D-38

Vishay General Semiconductor - Diodes Division
3,971 -

RFQ

VS-1KAB100E

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 1.2 A 1.1 V @ 1.2 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-38
GBU8D

GBU8D

BRIDGE RECT 1PHASE 200V 8A GBU

onsemi
2,785 -

RFQ

GBU8D

Scheda tecnica

Tube - Active Single Phase Standard 200 V 8 A 1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
VS-1KAB10E

VS-1KAB10E

BRIDGE RECT 1P 100V 1.2A D-38

Vishay General Semiconductor - Diodes Division
2,014 -

RFQ

VS-1KAB10E

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 1.2 A 1.1 V @ 1.2 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-38
BR1001SG-G

BR1001SG-G

BRIDGE RECT 1PHASE 100V 10A BR-8

Comchip Technology
3,715 -

RFQ

BR1001SG-G

Scheda tecnica

Bulk - Active Single Phase Standard 100 V 10 A 1.1 V @ 5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Chassis Mount 4-Square, BR-8
GBU6M-E3/51

GBU6M-E3/51

BRIDGE RECT 1PHASE 1KV 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,531 -

RFQ

GBU6M-E3/51

Scheda tecnica

Bulk - Active Single Phase Standard 1 kV 3.8 A 1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBJ802-F

GBJ802-F

BRIDGE RECT 1PHASE 200V 8A GBJ

Diodes Incorporated
3,513 -

RFQ

GBJ802-F

Scheda tecnica

Tube - Active Single Phase Standard 200 V 8 A 1 V @ 4 A 5 µA @ 200 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBPC602-E4/51

GBPC602-E4/51

BRIDGE RECT 1PHASE 200V 3A GBPC6

Vishay General Semiconductor - Diodes Division
3,969 -

RFQ

GBPC602-E4/51

Scheda tecnica

Bulk - Active Single Phase Standard 200 V 3 A 1 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-6
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1500+ Media giornaliera RFQ
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20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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