Diodi - Raddrizzatori - Array

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
MBR2X080A120

MBR2X080A120

DIODE SCHOTTKY 120V 80A SOT227

GeneSiC Semiconductor
3,183 -

RFQ

MBR2X080A120

Scheda tecnica

Bulk - Active 2 Independent Schottky 120 V 80A 880 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 120 V -40°C ~ 150°C Chassis Mount
MBR2X080A150

MBR2X080A150

DIODE SCHOTTKY 150V 80A SOT227

GeneSiC Semiconductor
2,628 -

RFQ

MBR2X080A150

Scheda tecnica

Bulk - Active 2 Independent Schottky 150 V 80A 880 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C Chassis Mount
MBR2X080A180

MBR2X080A180

DIODE SCHOTTKY 180V 80A SOT227

GeneSiC Semiconductor
3,592 -

RFQ

MBR2X080A180

Scheda tecnica

Bulk - Active 2 Independent Schottky 180 V 80A 920 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 180 V -40°C ~ 150°C Chassis Mount
MBR2X080A200

MBR2X080A200

DIODE SCHOTTKY 200V 80A SOT227

GeneSiC Semiconductor
2,073 -

RFQ

MBR2X080A200

Scheda tecnica

Bulk - Active 2 Independent Schottky 200 V 80A 920 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C Chassis Mount
MUR2X100A10

MUR2X100A10

DIODE GEN PURP 1KV 100A SOT227

GeneSiC Semiconductor
3,590 -

RFQ

MUR2X100A10

Scheda tecnica

Bulk - Active 2 Independent Standard 1000 V 100A 2.35 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1000 V -55°C ~ 175°C Chassis Mount
MUR2X100A12

MUR2X100A12

DIODE GEN PURP 1.2KV 100A SOT227

GeneSiC Semiconductor
3,733 -

RFQ

MUR2X100A12

Scheda tecnica

Bulk - Active 2 Independent Standard 1200 V 100A 2.35 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 175°C Chassis Mount
MBR2X100A045

MBR2X100A045

DIODE SCHOTTKY 45V 100A SOT227

GeneSiC Semiconductor
3,481 -

RFQ

MBR2X100A045

Scheda tecnica

Bulk - Active 2 Independent Schottky 45 V 100A 700 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 45 V -40°C ~ 150°C Chassis Mount
MBR2X100A060

MBR2X100A060

DIODE SCHOTTKY 60V 100A SOT227

GeneSiC Semiconductor
2,435 -

RFQ

MBR2X100A060

Scheda tecnica

Bulk - Active 2 Independent Schottky 60 V 100A 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V -40°C ~ 150°C Chassis Mount
MBR2X100A080

MBR2X100A080

DIODE SCHOTTKY 80V 100A SOT227

GeneSiC Semiconductor
3,731 -

RFQ

MBR2X100A080

Scheda tecnica

Bulk - Active 2 Independent Schottky 80 V 100A 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V -40°C ~ 150°C Chassis Mount
MBR2X100A100

MBR2X100A100

DIODE SCHOTTKY 100V 100A SOT227

GeneSiC Semiconductor
3,349 -

RFQ

MBR2X100A100

Scheda tecnica

Bulk - Active 2 Independent Schottky 100 V 100A 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V -40°C ~ 150°C Chassis Mount
MBR2X100A120

MBR2X100A120

DIODE SCHOTTKY 120V 100A SOT227

GeneSiC Semiconductor
3,553 -

RFQ

MBR2X100A120

Scheda tecnica

Bulk - Active 2 Independent Schottky 120 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 120 V -40°C ~ 150°C Chassis Mount
MBR2X100A150

MBR2X100A150

DIODE SCHOTTKY 150V 100A SOT227

GeneSiC Semiconductor
3,720 -

RFQ

MBR2X100A150

Scheda tecnica

Bulk - Active 2 Independent Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C Chassis Mount
MBR2X100A200

MBR2X100A200

DIODE SCHOTTKY 200V 100A SOT227

GeneSiC Semiconductor
3,941 -

RFQ

MBR2X100A200

Scheda tecnica

Bulk - Active 2 Independent Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C Chassis Mount
MUR2X120A02

MUR2X120A02

DIODE GEN PURP 200V 120A SOT227

GeneSiC Semiconductor
2,544 -

RFQ

MUR2X120A02

Scheda tecnica

Bulk - Active 2 Independent Standard 200 V 120A 1 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 200 V -55°C ~ 175°C Chassis Mount
MUR2X120A04

MUR2X120A04

DIODE GEN PURP 400V 120A SOT227

GeneSiC Semiconductor
2,897 -

RFQ

MUR2X120A04

Scheda tecnica

Bulk - Active 2 Independent Standard 400 V 120A 1.3 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 400 V -55°C ~ 175°C Chassis Mount
MUR2X120A06

MUR2X120A06

DIODE GEN PURP 600V 120A SOT227

GeneSiC Semiconductor
2,854 -

RFQ

MUR2X120A06

Scheda tecnica

Bulk - Active 2 Independent Standard 600 V 120A 1.3 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 175°C Chassis Mount
MSRT200100A

MSRT200100A

DIODE MODULE 1KV 200A 3TOWER

GeneSiC Semiconductor
3,577 -

RFQ

MSRT200100A

Scheda tecnica

Bulk - Active 1 Pair Common Cathode Standard 1000 V 200A (DC) 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -40°C ~ 175°C Chassis Mount
MSRT200120A

MSRT200120A

DIODE MODULE 1.2KV 200A 3TOWER

GeneSiC Semiconductor
3,912 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1200 V 200A (DC) 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -40°C ~ 175°C Chassis Mount
MSRT200140A

MSRT200140A

DIODE MODULE 1.4KV 200A 3TOWER

GeneSiC Semiconductor
2,826 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1400 V 200A (DC) 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -40°C ~ 175°C Chassis Mount
MSRT200160A

MSRT200160A

DIODE MODULE 1.6KV 200A 3TOWER

GeneSiC Semiconductor
2,397 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1600 V 200A (DC) 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -40°C ~ 175°C Chassis Mount
Total 920 Record«Prev1... 2324252627282930...46Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente