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Diodi - Raddrizzatori - Array

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
WN3S30H100CXQ DUAL COMMON CATHODE POWER SCHOTT WeEn Semiconductors	2,460	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Schottky	100 V	15A	710 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	150°C	Through Hole
WNS30H100CQ DIODE ARRAY SCHOTTKY 100V TO220E WeEn Semiconductors	3,744	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Schottky	100 V	15A	710 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	150°C (Max)	Through Hole
WNS40H100CBJ DIODE ARRAY SCHOT 100V 20A D2PAK WeEn Semiconductors	2,210	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	1 Pair Common Cathode	Schottky	100 V	20A	710 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	150°C (Max)	Surface Mount
WN3S40H100CQ DUAL COMMON CATHODE POWER SCHOTT WeEn Semiconductors	3,551	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Schottky	100 V	20A	710 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	150°C	Through Hole
WN3S40H100CXQ DUAL COMMON CATHODE POWER SCHOTT WeEn Semiconductors	3,764	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Schottky	100 V	20A	710 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	150°C	Through Hole
WNS40100CQ POWER SCHOTTKY DIODES WeEn Semiconductors	3,449	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Schottky	100 V	20A	780 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	150°C	Through Hole
WNS40H100CQ DIODE ARRAY SCHOTTKY 100V TO220E WeEn Semiconductors	3,005	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Schottky	100 V	20A	710 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	150°C (Max)	Through Hole
BYV72EW-200,127 DIODE ARRAY GP 200V 15A TO247-3 WeEn Semiconductors	2,495	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Standard	200 V	15A	1.2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	28 ns	100 µA @ 200 V	150°C (Max)	Through Hole
WNSC2D20650CJQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	3,302	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	20A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	175°C	Through Hole
WNSC2D16650CJQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	2,661	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	16A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	175°C	Through Hole
WNSC2D30650WQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	2,616	-	RFQ	Scheda tecnica	Tube	-	Active	1 Independent	Silicon Carbide Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	175°C	Through Hole
WNSC2D30650CWQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	3,423	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	30A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	175°C	Through Hole
WNSC2D16650CWQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	230	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	16A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	175°C	Through Hole
WNSC2D20650CWQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	480	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	20A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	175°C	Through Hole
WNSC16650CWQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	480	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	16A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	175°C	Through Hole
WNSC2D201200CWQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	480	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	20A	1.65 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 1200 V	175°C	Through Hole
WNSC2D301200CWQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	596	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	30A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	175°C	Through Hole
BYV32E-150,127 DIODE ARRAY GP 150V 20A TO220AB WeEn Semiconductors	684	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Standard	150 V	20A	1.15 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	30 µA @ 150 V	150°C (Max)	Through Hole
BYV34-400,127 DIODE ARRAY GP 400V 20A TO220AB WeEn Semiconductors	942	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Standard	400 V	20A	1.35 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 400 V	-	Through Hole
BYQ28E-200,127 DIODE ARRAY GP 200V 10A TO220AB WeEn Semiconductors	894	-	RFQ	Scheda tecnica	Tube	-	Active	1 Pair Common Cathode	Standard	200 V	10A	1.25 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 200 V	150°C (Max)	Through Hole