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Diodi - Raddrizzatori - Array
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBR3035PT30 AMP SCHOTTKY T0-218 Solid State Inc. |
2,006 | - |
RFQ |
Bulk | - | Active | 2 Independent | Schottky | 35 V | 30A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Through Hole | |
|
MBR10200FCTSCHOTTKY DIODE 200V 10A ITO-220A Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,509 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 200 V | 10A | 900 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 200 V | -55°C ~ 175°C | Through Hole |
|
MBR20100CTSSCHOTTKY DIODE 100V 20A TO-220AB Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,524 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 100 V | 20A | 850 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | -55°C ~ 175°C | Through Hole |
|
|
MBR10150FCTSCHOTTKY DIODE 150V 10A ITO-220A Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,093 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 150 V | 10A | 850 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | -55°C ~ 175°C | Through Hole |
|
BYV32E-150,127NOW WEEN - BYV32E-150 - ULTRAFAS NXP USA Inc. |
3,895 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | 1 Pair Common Cathode | Standard | 150 V | 20A | 1.15 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 30 µA @ 150 V | 150°C (Max) | Through Hole |
|
|
MBR20200CTSSCHOTTKY DIODE 200V 20A TO-220AB Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,196 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 200 V | 20A | 950 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 200 V | -55°C ~ 175°C | Through Hole |
|
|
MBR20150FCTSCHOTTKY DIODE 150V 20A ITO-220A Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,295 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 150 V | 20A | 850 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | -55°C ~ 175°C | Through Hole |
|
MBRB20100CTSCHOTTKY DIODE 100V 20A TO-263 Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,886 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 100 V | 20A | 800 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | -55°C ~ 175°C | Surface Mount |
|
|
MBR10100FCTSCHOTTKY DIODE 100V 10A ITO-220A Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,547 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 100 V | 10A | 800 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | -55°C ~ 175°C | Through Hole |
|
|
MBR1060CTSCHOTTKY DIODE 60V 10A TO-220AB Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,074 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 60 V | 10A | 750 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 60 V | -55°C ~ 150°C | Through Hole |
|
|
MBR10200CTSCHOTTKY DIODE 200V 10A TO-220AB Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,730 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 200 V | 10A | 900 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 200 V | -55°C ~ 175°C | Through Hole |
|
BYV32E-200,127NOW WEEN - BYV32E-200 - ULTRAFAS NXP Semiconductors |
2,429 | - |
RFQ |
Scheda tecnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
NTSJ40120CTGNTST40120 - SCHOTTKY POWER RECTI onsemi |
2,956 | - |
RFQ |
Scheda tecnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
BYV42G-200,127NOW WEEN - BYV42G-200 - ULTRAFAS NXP USA Inc. |
3,490 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | 1 Pair Common Cathode | Standard | 200 V | 15A | 850 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 28 ns | 100 µA @ 200 V | 150°C (Max) | Through Hole |
|
BAV99W/DG/B3135NEXPERIA BAV99 - DUAL HIGH-SPEE NXP USA Inc. |
2,584 | - |
RFQ |
Scheda tecnica |
Bulk | Automotive, AEC-Q101 | Active | 1 Pair Series Connection | Standard | 100 V | 150mA (DC) | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 500 nA @ 80 V | 150°C (Max) | Surface Mount |
|
|
BAT54SWT1GRECTIFIER DIODE, SCHOTTKY, 2 ELE Fairchild Semiconductor |
2,448 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | 1 Pair Series Connection | Schottky | 30 V | 200mA (DC) | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | -55°C ~ 125°C | Surface Mount |
|
BAT240AE6327BAT240 - BRIDGE RECTIFIER Infineon Technologies |
2,490 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | 1 Pair Series Connection | Schottky | 240 V | 400mA (DC) | 900 mV @ 400 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 200 V | 150°C | Surface Mount |
|
BAV70SRA147NEXPERIA BAV70 - HIGH-SPEED SWI NXP USA Inc. |
3,105 | - |
RFQ |
Scheda tecnica |
Bulk | Automotive, AEC-Q101 | Active | 2 Pair Common Cathode | Standard | 100 V | 355mA (DC) | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 500 nA @ 80 V | 150°C (Max) | Surface Mount |
|
|
BAS40-05E6327BAS40 - HIGH SPEED SWITCHING, CL Infineon Technologies |
2,055 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | 1 Pair Common Cathode | Schottky | 40 V | 120mA (DC) | 1 V @ 40 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 30 V | 150°C | Surface Mount |
|
BAS40-05,235NOW NEXPERIA BAS40-05 - RECTIFIE NXP USA Inc. |
2,960 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | 1 Pair Common Cathode | Schottky | 40 V | 120mA (DC) | 1 V @ 40 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 40 V | 150°C (Max) | Surface Mount |
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