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Diodi - Raddrizzatori - Array

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
G3S12010BM SIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology-GPT	2,069	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	19.8A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S12010B SIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology-GPT	3,360	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	39A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G4S06530BT SIC SCHOTTKY DIODE 650V 30A 3-PI Global Power Technology-GPT	2,591	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	39A (DC)	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G5S12020BM SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT	2,878	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	33A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S12020B SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT	2,614	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	37A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G5S12020B SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT	2,438	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	33A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G4S12020BM SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT	2,347	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	33.2A (DC)	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S06540B SIC SCHOTTKY DIODE 650V 40A 3-PI Global Power Technology-GPT	2,423	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	60A (DC)	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G5S12030BM SIC SCHOTTKY DIODE 1200V 30A 3-P Global Power Technology-GPT	3,075	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	55A (DC)	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
DBA200UA40 DIODE MODULE 400V 200A SanRex Corporation	2,104	-	RFQ	Scheda tecnica	Tube	-	Active	2 Independent	Standard	400 V	100A	1.2 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	100 mA @ 400 V	-40°C ~ 150°C	Chassis Mount
DBA200YA40 DIODE MODULE 400V 200A SanRex Corporation	3,297	-	RFQ	Scheda tecnica	Tray	-	Active	2 Independent	Standard	400 V	100A	1.35 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	6 mA @ 400 V	-40°C ~ 150°C	Chassis Mount
DBA200WA40 DIODE MODULE 400V 200A SanRex Corporation	2,172	-	RFQ	Scheda tecnica	Tube	-	Active	2 Independent	Standard	400 V	100A	1.2 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	110 ns	4 mA @ 400 V	-40°C ~ 150°C	Chassis Mount
G3S17010B SIC SCHOTTKY DIODE 1700V 10A 3-P Global Power Technology-GPT	2,967	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1700 V	29.5A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1700 V	-55°C ~ 175°C	Through Hole
DBA200WA60 DIODE MODULE 600V 200A SanRex Corporation	2,320	-	RFQ	Scheda tecnica	Tube	-	Active	2 Independent	Standard	600 V	100A	1.5 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	4 mA @ 600 V	-40°C ~ 150°C	Chassis Mount
DBA200UA60 DIODE MODULE 600V 200A SanRex Corporation	2,701	-	RFQ	Scheda tecnica	Tube	-	Active	2 Independent	Standard	600 V	100A	1.35 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	100 mA @ 600 V	-40°C ~ 150°C	Chassis Mount
UC1611J883B UC1611 QUAD SCHOTTKY DIODE ARRAY Texas Instruments	2,163	-	RFQ	Scheda tecnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-
G3S06560B SIC SCHOTTKY DIODE 650V 4A 3-PIN Global Power Technology-GPT	2,544	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	95A (DC)	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G3S12030B SIC SCHOTTKY DIODE 1200V 30A 3-P Global Power Technology-GPT	2,618	-	RFQ	Scheda tecnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	42A (DC)	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
DD60KB160 DIODE MODULE 1600V 60A SanRex Corporation	3,456	-	RFQ	Scheda tecnica	Tray	-	Active	1 Pair Series Connection	Standard	1600 V	60A	1.35 V @ 180 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1600 V	-40°C ~ 150°C	Chassis Mount
DD60KB80 DIODE MODULE 800V 60A SanRex Corporation	3,426	-	RFQ	Scheda tecnica	Tray	-	Active	1 Pair Series Connection	Standard	800 V	60A	1.35 V @ 180 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 800 V	-40°C ~ 150°C	Chassis Mount