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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
VS-80PF40W DIODE GEN PURP 400V 80A DO203AB Vishay General Semiconductor - Diodes Division	3,359	-	RFQ	Scheda tecnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	-	400 V	80A	-55°C ~ 180°C	1.4 V @ 220 A
STPSC2H12D DIODE SCHOTTKY 1.2KV 2A TO220AC STMicroelectronics	3,242	-	RFQ	Scheda tecnica	Tube	ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	190pF @ 0V, 1MHz	0 ns	12 µA @ 1200 V	1200 V	2A	-40°C ~ 175°C	1.5 V @ 2 A
SB340 SchottkyD, 40V, 3A DComponents	45,900	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	3A	-50°C ~ 150°C	490 mV @ 3 A
IDH04G65C5XKSA2 DIODE SCHOTTKY 650V 4A TO220-2-1 Rochester Electronics, LLC	3,003	-	RFQ	Scheda tecnica	Bulk,Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	130pF @ 1V, 1MHz	0 ns	70 µA @ 650 V	650 V	4A (DC)	-55°C ~ 175°C	1.7 V @ 4 A
VS-10ETS12FP-M3 DIODE GEN PURP 1.2KV 10A TO220FP Vishay General Semiconductor - Diodes Division	3,289	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	50 µA @ 1200 V	1200 V	10A	-40°C ~ 150°C	1.1 V @ 10 A
STTH812D DIODE GEN PURP 1.2KV 8A TO220AC STMicroelectronics	3,435	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	8 µA @ 1200 V	1200 V	8A	175°C (Max)	2.2 V @ 8 A
SK54_R1_00001 SMC, SKY Panjit International Inc.	900	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	200 µA @ 40 V	40 V	5A	-55°C ~ 150°C	550 mV @ 5 A
VS-HFA16TB120-M3 DIODE FRED 1.2KV 16A TO220AC Vishay General Semiconductor - Diodes Division	3,307	-	RFQ	Scheda tecnica	Tube	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	135 ns	20 µA @ 1200 V	1200 V	16A (DC)	-55°C ~ 150°C	3.93 V @ 32 A
UF4005 R-600V 1A ULTRA FAST NTE Electronics, Inc	187	-	RFQ	Scheda tecnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
VS-20ETS16THM3 RECTIFIER DIODE 20A 1600V TO-220 Vishay General Semiconductor - Diodes Division	2,232	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1600 V	1600 V	20A	-40°C ~ 150°C	1.1 V @ 20 A
RGP15B R-100V 1.5A FAST SW NTE Electronics, Inc	422	-	RFQ	Scheda tecnica	Bag	RGP15	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 4V, 1MHz	150 ns	5 µA @ 100 V	100 V	1.5A	-	1.3 V @ 1.5 A
APT30S20BG DIODE SCHOTTKY 200V 45A TO247 Microchip Technology	3,237	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	55 ns	500 µA @ 200 V	200 V	45A	-55°C ~ 150°C	850 mV @ 30 A
VI20150SG-M3/4W DIODE SCHOTTKY 20A 150V TO-262AA Vishay General Semiconductor - Diodes Division	2,452	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 150 V	150 V	20A	-55°C ~ 150°C	1.6 V @ 20 A
MURB3JG_R1_00001 SMB, SUPER Panjit International Inc.	800	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	28pF @ 4V, 1MHz	50 ns	5 µA @ 600 V	600 V	3A	-55°C ~ 175°C	1.25 V @ 3 A
61SPB045A DIODE SCHOTTKY 45V 60A SPD-2A SMC Diode Solutions	2,180	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	2400pF @ 5V, 1MHz	-	1.2 mA @ 45 V	45 V	60A	-55°C ~ 175°C	660 mV @ 60 A
VS-20ETS08-M3 DIODE GEN PURP 800V 20A TO220AC Vishay General Semiconductor - Diodes Division	3,491	-	RFQ	Scheda tecnica	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 800 V	800 V	20A	-40°C ~ 150°C	1.1 V @ 20 A
MBRF10100-M3/4W DIODE SCHOTTKY 100V 10A ITO220AC Vishay General Semiconductor - Diodes Division	3,547	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	10A	-65°C ~ 150°C	800 mV @ 10 A
UF4006 R-800V 1A ULTRA FAST NTE Electronics, Inc	430	-	RFQ	Scheda tecnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	10 µA @ 800 V	800 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
1N5811E3 RECTIFIER UFR,FRR Microchip Technology	3,194	-	RFQ	Scheda tecnica	Bulk	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 10V, 1MHz	30 ns	5 µA @ 150 V	150 V	3A	-65°C ~ 175°C	875 mV @ 4 A
STTH12R06DIRG DIODE GEN PURP 600V 12A TO220AC STMicroelectronics	3,742	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	45 ns	45 µA @ 600 V	600 V	12A	175°C (Max)	2.9 V @ 12 A