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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYX85TAPDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,952 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 20pF @ 4V, 1MHz | 4 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
BY458TRDIODE AVALANCHE 1.2KV 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,385 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 2 µs | 3 µA @ 1200 V | 1200 V | 2A | 140°C (Max) | 1.6 V @ 3 A | |
|
|
BYT51J-TRDIODE AVALANCHE 600V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,749 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
BYT52G-TRDIODE AVALANCHE 400V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
2,771 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 400 V | 400 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
VS-12F80DIODE GEN PURP 800V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,045 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 800 V | 800 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
|
BYT53B-TRDIODE AVALANCHE 100V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
2,912 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 100 V | 100 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
BYT54G-TRDIODE AVALANCHE 400V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
2,379 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 400 V | 400 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
BYV14-TRDIODE AVALANCHE 600V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,988 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
VS-80EBU02HF4DIODE GEN PURP 200V 80A POWERTAB Vishay General Semiconductor - Diodes Division |
2,064 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 40 ns | 50 µA @ 200 V | 200 V | 80A | -55°C ~ 175°C | 1.1 V @ 80 A |
|
|
BYW34-TRDIODE AVALANCHE 400V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,358 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
VS-12FL10S05DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,596 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 50 µA @ 100 V | 100 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
VS-SD800C24LDIODE GP 2.4KV 1180A DO200AB Vishay General Semiconductor - Diodes Division |
3,240 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Clamp On | - | - | 50 mA @ 2400 V | 2400 V | 1180A | - | 1.66 V @ 2000 A | |
|
|
BYX85TRDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,907 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 20pF @ 4V, 1MHz | 4 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
BA159-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,075 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 125°C | 1.3 V @ 1 A | |
|
|
1N4937-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,174 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -50°C ~ 150°C | 1.2 V @ 1 A | |
|
EGF1A-E3/5CADIODE GEN PURP 50V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,460 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
EGF1C-E3/5CADIODE GEN PURP 150V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,046 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
EGF1D-E3/5CADIODE GEN PURP 200V 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,732 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
EGF1C-E3/67ADIODE GEN PURP 150V 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,489 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
SE80PWBHM3/IDIODE GEN PURP 100V 8A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,709 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
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