Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-SD1100C16L

VS-SD1100C16L

DIODE GEN PURP 1.6KV 1170A B-43

Vishay General Semiconductor - Diodes Division
2,753 -

RFQ

VS-SD1100C16L

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 15 mA @ 1600 V 1600 V 1170A - 1.31 V @ 1500 A
VS-309UA250

VS-309UA250

DIODE GEN PURP 2.5KV 300A DO9

Vishay General Semiconductor - Diodes Division
2,365 -

RFQ

VS-309UA250

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - - 2500 V 300A -40°C ~ 180°C 1.46 V @ 942 A
VS-SD803C16S15C

VS-SD803C16S15C

DIODE GEN PURP 1.6KV 845A B-43

Vishay General Semiconductor - Diodes Division
3,027 -

RFQ

VS-SD803C16S15C

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 1.5 µs 45 mA @ 1600 V 1600 V 845A - 1.89 V @ 2655 A
VS-40APS16-M3

VS-40APS16-M3

DIODE GEN PURP 1.6KV 40A TO247AC

Vishay General Semiconductor - Diodes Division
3,520 -

RFQ

VS-40APS16-M3

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 1600 V 1600 V 40A -40°C ~ 150°C 1.14 V @ 40 A
VS-VSKE71/06

VS-VSKE71/06

DIODE GEN PURP 600V 80A ADDAPAK

Vishay General Semiconductor - Diodes Division
2,017 -

RFQ

VS-VSKE71/06

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 10 mA @ 600 V 600 V 80A -40°C ~ 150°C -
VS-VSKE56/10

VS-VSKE56/10

DIODE GEN PURP 1KV 60A ADDAPAK

Vishay General Semiconductor - Diodes Division
3,788 -

RFQ

VS-VSKE56/10

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 10 mA @ 1000 V 1000 V 60A -40°C ~ 150°C -
VS-EPX6007L-N3

VS-EPX6007L-N3

RECTIFIER HYPERFAST 60A TO-247AD

Vishay General Semiconductor - Diodes Division
3,280 -

RFQ

VS-EPX6007L-N3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 42 ns 30 µA @ 650 V 650 V 60A -55°C ~ 175°C 2.5 V @ 60 A
VS-HFA25TB60STLHM3

VS-HFA25TB60STLHM3

DIODE GEN PURP 600V 25A TO263AB

Vishay General Semiconductor - Diodes Division
2,552 -

RFQ

VS-HFA25TB60STLHM3

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 600pF @ 5V, 1MHz 50 ns 20 µA @ 600 V 600 V 25A -55°C ~ 150°C 1.7 V @ 25 A
VS-HFA25TB60STRHM3

VS-HFA25TB60STRHM3

DIODE GEN PURP 600V 25A TO263AB

Vishay General Semiconductor - Diodes Division
2,753 -

RFQ

VS-HFA25TB60STRHM3

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 20 µA @ 600 V 600 V 25A -55°C ~ 150°C 1.7 V @ 25 A
VS-6TQ035PBF

VS-6TQ035PBF

DIODE SCHOTTKY 35V 6A TO220AC

Vishay General Semiconductor - Diodes Division
2,414 -

RFQ

VS-6TQ035PBF

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 800 µA @ 35 V 35 V 6A -55°C ~ 175°C 600 mV @ 6 A
VS-45EPF06L-M3

VS-45EPF06L-M3

RECTIFIER DIODE 45A 600V TO-247A

Vishay General Semiconductor - Diodes Division
2,414 -

RFQ

VS-45EPF06L-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 100 µA @ 600 V 600 V 45A -40°C ~ 150°C 1.31 V @ 45 A
VS-45APF06L-M3

VS-45APF06L-M3

NEW INPUT DIODES - TO-247

Vishay General Semiconductor - Diodes Division
3,659 -

RFQ

VS-45APF06L-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 100 µA @ 600 V 600 V 45A -40°C ~ 150°C 1.31 V @ 45 A
VS-305UA250P4

VS-305UA250P4

DIODE GEN PURP 2KV 300A DO205AB

Vishay General Semiconductor - Diodes Division
2,863 -

RFQ

VS-305UA250P4

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - - 2000 V 300A -40°C ~ 180°C 1.46 V @ 942 A
VS-SD410C08C

VS-SD410C08C

DIODE A-PUK

Vishay General Semiconductor - Diodes Division
2,327 -

RFQ

Bulk RoHS - - Active - - - - - - - -
VS-65APS12L-M3

VS-65APS12L-M3

RECTIFIER DIODE 65A 1200V TO-247

Vishay General Semiconductor - Diodes Division
3,965 -

RFQ

VS-65APS12L-M3

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 1200 V 1200 V 65A -40°C ~ 150°C 1.12 V @ 65 A
VS-65APS16L-M3

VS-65APS16L-M3

RECTIFIER DIODE 65A 1600V TO-247

Vishay General Semiconductor - Diodes Division
2,336 -

RFQ

VS-65APS16L-M3

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 1600 V 1600 V 65A -40°C ~ 150°C 1.17 V @ 65 A
VS-305URA250P4

VS-305URA250P4

DIODE GEN PURP 2KV 300A DO205AB

Vishay General Semiconductor - Diodes Division
3,288 -

RFQ

VS-305URA250P4

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - - 2000 V 300A -40°C ~ 180°C 1.46 V @ 942 A
VS-65APS08L-M3

VS-65APS08L-M3

NEW INPUT DIODES - TO-247

Vishay General Semiconductor - Diodes Division
2,690 -

RFQ

VS-65APS08L-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 800 V 800 V 65A -40°C ~ 150°C 1.12 V @ 65 A
VS-65EPS08L-M3

VS-65EPS08L-M3

NEW INPUT DIODES - TO-247

Vishay General Semiconductor - Diodes Division
2,084 -

RFQ

VS-65EPS08L-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 800 V 800 V 65A -40°C ~ 150°C 1.12 V @ 65 A
VS-50EPU12L-N3

VS-50EPU12L-N3

DIODE GEN PURP 1.2KV 50A TO247AD

Vishay General Semiconductor - Diodes Division
2,177 -

RFQ

VS-50EPU12L-N3

Scheda tecnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 262 ns 330 µA @ 1200 V 1200 V 50A -55°C ~ 175°C 2.55 V @ 50 A
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