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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-8EWS12STRR-M3DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,029 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
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VS-5EWX06FNTR-M3DIODE GEN PURP 600V 5A DPAK Vishay General Semiconductor - Diodes Division |
2,045 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 18 ns | 20 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 2.9 V @ 5 A |
|
|
VS-5EWL06FN-M3DIODE GEN PURP 600V 5A TO252AA Vishay General Semiconductor - Diodes Division |
3,883 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 145 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.2 V @ 5 A |
|
SB150-E3/73DIODE SCHOTTKY 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
1,394 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 650 mV @ 1 A | |
|
VS-25F10DIODE GEN PURP 100V 25A DO203AA Vishay General Semiconductor - Diodes Division |
2,869 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 100 V | 100 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A | |
|
B360A-M3/61TDIODE SCHOTTKY 60V 3A DO214AC Vishay General Semiconductor - Diodes Division |
1,109 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 4V, 1MHz | - | 200 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 720 mV @ 3 A | |
|
|
VS-5EWH06FNTRL-M3DIODE GEN PURP 600V 5A D-PAK Vishay General Semiconductor - Diodes Division |
3,433 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
UG2D-E3/73DIODE GEN PURP 200V 2A DO204AC Vishay General Semiconductor - Diodes Division |
1,044 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
VS-E4PU3006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
2,486 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 50 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.6 V @ 30 A |
|
SB330-E3/54DIODE SCHOTTKY 30V 3A DO201AD Vishay General Semiconductor - Diodes Division |
1,032 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 3A | -65°C ~ 125°C | 490 mV @ 3 A | |
|
VS-EPU3006-N3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,393 | - |
RFQ |
Scheda tecnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2 V @ 30 A |
|
|
VS-5EWH06FNTRR-M3DIODE GEN PURP 600V 5A D-PAK Vishay General Semiconductor - Diodes Division |
3,965 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
VS-APU3006-N3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,445 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2 V @ 30 A |
|
|
VS-5EWL06FNTRL-M3DIODE GEN PURP 600V 5A D-PAK Vishay General Semiconductor - Diodes Division |
2,703 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
SL44-E3/9ATDIODE SCHOTTKY 40V 4A DO214AB Vishay General Semiconductor - Diodes Division |
2,180 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 4A | -55°C ~ 125°C | 440 mV @ 4 A | |
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|
VSS8D5M6HM3/I5A, 60V, SLIMSMAW TRENCH SKY REC Vishay General Semiconductor - Diodes Division |
6,845 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 620pF @ 4V, 1MHz | - | 350 µA @ 60 V | 60 V | 2.7A | -40°C ~ 175°C | 500 mV @ 2.5 A |
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|
ES1PD-M3/85ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
6,487 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
S07D-GS08DIODE GP 200V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
5,408 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A |
|
FESB16JT-E3/81DIODE GEN PURP 600V 16A TO263AB Vishay General Semiconductor - Diodes Division |
282 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 145pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A | |
|
BAS386-TRDIODE SCHOTT 50V 200MA MICROMELF Vishay General Semiconductor - Diodes Division |
3,048 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 880pF @ 0V, 1MHz | - | 5 µA @ 40 V | 50 V | 200mA | 125°C (Max) | 900 mV @ 100 mA |
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