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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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60EPS12DIODE GEN PURP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,795 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 60A | -40°C ~ 150°C | 1.1 V @ 60 A | |
|
S2M/54DIODE GEN PURP 1KV 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,531 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
HFA08TB120SDIODE GEN PURP 1.2KV 8A D2PAK Vishay General Semiconductor - Diodes Division |
2,504 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 95 ns | 10 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 3.3 V @ 8 A |
|
60HQ100DIODE SCHOTTKY 100V 60A DO203AB Vishay General Semiconductor - Diodes Division |
3,122 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis, Stud Mount | 1400pF @ 5V, 1MHz | - | 1.5 mA @ 100 V | 100 V | 60A | -65°C ~ 175°C | 890 mV @ 60 A | |
|
SS12/54DIODE SCHOTTKY 20V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,782 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 1A | -65°C ~ 125°C | 500 mV @ 1 A | |
|
|
HFA15TB60SDIODE GEN PURP 600V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,420 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 60 ns | 10 µA @ 600 V | 600 V | 15A | -55°C ~ 150°C | 1.7 V @ 15 A |
|
70EPF04DIODE GEN PURP 400V 70A POWIRTAB Vishay General Semiconductor - Diodes Division |
3,514 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 400 V | 400 V | 70A | -40°C ~ 150°C | 1.33 V @ 70 A | |
|
MBRF1635/45DIODE SCHOTTKY 35V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
3,304 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
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|
SGL41-20/96DIODE SCHOTTKY 20V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,987 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
|
HFA25TB60SDIODE GEN PURP 600V 25A D2PAK Vishay General Semiconductor - Diodes Division |
3,995 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 20 µA @ 600 V | 600 V | 25A | -55°C ~ 150°C | 1.7 V @ 25 A |
|
|
75HQ045DIODE SCHOTTKY 45V 75A DO203AB Vishay General Semiconductor - Diodes Division |
2,093 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis, Stud Mount | - | - | 5 mA @ 45 V | 45 V | 75A | -65°C ~ 175°C | 710 mV @ 75 A | |
|
MUR120/54DIODE GEN PURP 200V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,418 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 2 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A | ||
|
|
SGL41-40/96DIODE SCHOTTKY 40V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,796 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
|
MURB1520DIODE GEN PURP 200V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,551 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
VS-80SQ035DIODE SCHOTTKY 35V 8A DO204AR Vishay General Semiconductor - Diodes Division |
3,188 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 2 mA @ 35 V | 35 V | 8A | -55°C ~ 175°C | 530 mV @ 8 A | |
|
|
MUR160/54DIODE GEN PURP 600V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,836 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A | |
|
|
SGL41-60/96DIODE SCHOTTKY 60V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,566 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
MURB820DIODE GEN PURP 200V 8A D2PAK Vishay General Semiconductor - Diodes Division |
2,986 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 175°C | 975 mV @ 8 A |
|
|
VS-80SQ035TRDIODE SCHOTTKY 35V 8A DO204AR Vishay General Semiconductor - Diodes Division |
3,209 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 2 mA @ 35 V | 35 V | 8A | -55°C ~ 175°C | 530 mV @ 8 A | |
|
P600D/4DIODE GEN PURP 200V 6A P600 Vishay General Semiconductor - Diodes Division |
2,345 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 200 V | 200 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A |
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