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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
120NQ035DIODE SCHOTTKY 35V 120A D-67 Vishay General Semiconductor - Diodes Division |
3,863 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | 5200pF @ 5V, 1MHz | - | 10 mA @ 35 V | 35 V | 120A | - | 570 mV @ 120 A | |
|
HFA08PB60DIODE GEN PURP 600V 8A TO247AC Vishay General Semiconductor - Diodes Division |
3,060 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 55 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
UF5404/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,911 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | ||
|
|
120NQ040DIODE SCHOTTKY 40V 120A D-67 Vishay General Semiconductor - Diodes Division |
2,592 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | 5200pF @ 5V, 1MHz | - | 10 mA @ 40 V | 40 V | 120A | - | 570 mV @ 120 A | |
|
HFA08TB60STRLDIODE GEN PURP 600V 8A D2PAK Vishay General Semiconductor - Diodes Division |
2,869 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 55 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
UG06D/54DIODE GEN PURP 200V 600MA MPG06 Vishay General Semiconductor - Diodes Division |
2,758 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
|
120NQ045DIODE SCHOTTKY 45V 120A D-67 Vishay General Semiconductor - Diodes Division |
2,656 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | 5200pF @ 5V, 1MHz | - | 10 mA @ 45 V | 45 V | 120A | - | 570 mV @ 120 A | |
|
MBR1035DIODE SCHOTTKY 35V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,825 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 570 mV @ 10 A | |
|
ES1D/1DIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,048 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A | |
|
|
120NQ045RDIODE SCHOTTKY 45V 120A D-67 Vishay General Semiconductor - Diodes Division |
2,140 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | 5200pF @ 5V, 1MHz | - | 10 mA @ 45 V | 45 V | 120A | - | 570 mV @ 120 A | |
|
MBR1635DIODE SCHOTTKY 35V 16A TO220AC Vishay General Semiconductor - Diodes Division |
3,765 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
|
ES2D/1DIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,914 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
|
121NQ035DIODE SCHOTTKY 35V 120A D-67 Vishay General Semiconductor - Diodes Division |
3,639 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | 5200pF @ 5V, 1MHz | - | 10 mA @ 35 V | 35 V | 120A | - | 650 mV @ 120 A | |
|
|
MBR735DIODE SCHOTTKY 35V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
3,454 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
|
ES3D/7TDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,541 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
121NQ040DIODE SCHOTTKY 40V 120A D-67 Vishay General Semiconductor - Diodes Division |
2,084 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | 5200pF @ 5V, 1MHz | - | 10 mA @ 40 V | 40 V | 120A | - | 650 mV @ 120 A | |
|
HFA140NH60DIODE GEN PURP 600V 140A HALFPAK Vishay General Semiconductor - Diodes Division |
3,478 | - |
RFQ |
Scheda tecnica |
Bulk | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | 140 ns | 40 µA @ 600 V | 600 V | 140A | - | 1.6 V @ 140 A |
|
GI818DIODE GEN PURP 1KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,189 | - |
RFQ |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 750 ns | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A | |
|
|
121NQ045DIODE SCHOTTKY 45V 120A D-67 Vishay General Semiconductor - Diodes Division |
3,979 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | 5200pF @ 5V, 1MHz | - | 10 mA @ 45 V | 45 V | 120A | - | 650 mV @ 120 A | |
|
|
20ETS08STRLDIODE GEN PURP 800V 20A D2PAK Vishay General Semiconductor - Diodes Division |
2,394 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A |
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