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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ESH2PC-E3/85ADIODE GEN PURP 150V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,157 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 980 mV @ 2 A |
|
10BQ100TRDIODE SCHOTTKY 100V 1A SMB Vishay General Semiconductor - Diodes Division |
3,305 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 780 mV @ 1 A | |
|
|
ESH2PCHE3/85ADIODE GEN PURP 150V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,057 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 980 mV @ 2 A |
|
10ETF02SDIODE GEN PURP 200V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,368 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 145 ns | 100 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
ESH2PD-E3/85ADIODE GEN PURP 200V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,670 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 980 mV @ 2 A |
|
|
AU1PJ-M3/84ADIODE AVALANCHE 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,839 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 11pF @ 4V, 1MHz | 75 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.5 V @ 1 A |
|
SD101A-TRDIODE SCHOTTKY 60V 30MA DO35 Vishay General Semiconductor - Diodes Division |
29,238 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Through Hole | 2pF @ 0V, 1MHz | - | 200 nA @ 50 V | 60 V | 30mA (DC) | 125°C (Max) | 1 V @ 15 mA | |
|
FES8GT/45DIODE GEN PURP 400V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,937 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | ||
|
|
FES8JT/45DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,879 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A | ||
|
GL34B/1DIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,348 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.2 V @ 500 mA |
|
|
GL34D/1DIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,030 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.2 V @ 500 mA |
|
|
GL34G/1DIODE GEN PURP 400V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,651 | - |
RFQ |
Scheda tecnica |
Bulk | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 500mA | -65°C ~ 175°C | 1.2 V @ 500 mA |
|
|
GL34J/1DIODE GEN PURP 600V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,814 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 600 V | 600 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
10ETF04DIODE GEN PURP 400V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,244 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 145 ns | 100 µA @ 400 V | 400 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
ESH2PDHE3/85ADIODE GEN PURP 200V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,210 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 980 mV @ 2 A |
|
|
10ETF04SDIODE GEN PURP 400V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,320 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 145 ns | 100 µA @ 400 V | 400 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
10ETF06DIODE GEN PURP 600V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,970 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 145 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
10ETF06SDIODE GEN PURP 600V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,890 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 145 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
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10ETS08DIODE GEN PURP 800V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,540 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 50 µA @ 800 V | 800 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
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SE10PJ-E3/84ADIODE GEN PURP 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,030 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 780 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
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