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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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V12P12-5300M3/86ADIODE SCHOTTKY 120V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,353 | - |
RFQ |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 120 V | 120 V | 12A | -40°C ~ 150°C | 800 mV @ 12 A | |
|
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V15PM6HM3/HDIODE SCHOTTKY TMBS 15A 60V SMPC Vishay General Semiconductor - Diodes Division |
1,197 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2300pF @ 4V, 1MHz | - | 1.2 mA @ 60 V | 60 V | 15A | -40°C ~ 175°C | 640 mV @ 15 A |
|
VS-C10ET07T-M3DIODE SCHOTTKY 650V 10A TO220AC Vishay General Semiconductor - Diodes Division |
945 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 430pF @ 1V, 1MHz | - | 55 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | |
|
SL42-E3/57TDIODE SCHOTTKY 20V 4A DO214AB Vishay General Semiconductor - Diodes Division |
1,217 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 4A | -55°C ~ 125°C | 420 mV @ 4 A | |
|
|
VS-C12ET07T-M3DIODE SCHOTTKY 650V 12A TO220AC Vishay General Semiconductor - Diodes Division |
989 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 515pF @ 1V, 1MHz | - | 65 µA @ 650 V | 650 V | 12A (DC) | -55°C ~ 175°C | 1.7 V @ 12 A | |
|
|
V15P45-M3/86ADIODE SCHOTTKY 15A 45V TO-277A Vishay General Semiconductor - Diodes Division |
875 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 45 V | 45 V | 4.8A (DC) | -40°C ~ 150°C | 580 mV @ 15 A |
|
V35PWM45HM3/IDIODE SCHOTTKY 45V 35A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,700 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 4020pF @ 4V, 1MHz | - | 1.1 mA @ 45 V | 45 V | 35A | -40°C ~ 175°C | 670 mV @ 35 A |
|
|
V35PWM60HM3/IDIODE SCHOTTKY 60V 35A SLIMDPAK Vishay General Semiconductor - Diodes Division |
1,202 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 3340pF @ 4V, 1MHz | - | 2.1 mA @ 60 V | 60 V | 35A | -40°C ~ 175°C | 770 mV @ 35 A |
|
1N5627-TAPDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
1,493 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 200 V | 800 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
|
BYW82-TRDIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
1,249 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
|
BYM36E-TAPDIODE AVALANCHE 1KV 2.9A SOD64 Vishay General Semiconductor - Diodes Division |
2,271 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 150 ns | 5 µA @ 1000 V | 1000 V | 2.9A | -55°C ~ 175°C | 1.78 V @ 3 A | |
|
|
BYV28-600-TAPDIODE AVALANCHE 600V 3.5A SOD64 Vishay General Semiconductor - Diodes Division |
2,414 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 210 ns | 5 µA @ 600 V | 600 V | 3.5A | -55°C ~ 175°C | 1.35 V @ 5 A | |
|
|
BYW76TAPDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,304 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
BYW86TAPDIODE AVALANCHE 1KV 3A SOD64 Vishay General Semiconductor - Diodes Division |
1,065 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 800 V | 1000 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
BYG20J-7001HE3_A/IDIODE AVALANCHE 600V SMA Vishay General Semiconductor - Diodes Division |
3,073 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A |
|
VS-C16ET07T-M3DIODE SCHOTTKY 650V 8A TO220AC Vishay General Semiconductor - Diodes Division |
988 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 700pF @ 1V, 1MHz | - | 45 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A | |
|
VS-E5PX6006L-N360A, 600V, "X" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
520 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 46 ns | 25 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 2.2 V @ 60 A |
|
|
VS-C16CP07L-M3DIODE SCHOTTKY 650V 16A TO220AC Vishay General Semiconductor - Diodes Division |
500 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 320pF @ 1V, 1MHz | - | 85 µA @ 650 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A | |
|
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VS-C08ET07T-M3DIODE SCHOTTKY 650V 8A TO220AC Vishay General Semiconductor - Diodes Division |
990 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 355pF @ 1V, 1MHz | - | 45 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A | |
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VSS8D2M15-M3/H2A, 150V, SLIMSMAW TRENCH SKY Vishay General Semiconductor - Diodes Division |
3,490 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 150pF @ 4V, 1MHz | - | 150 µA @ 150 V | 150 V | 1.8A | -40°C ~ 175°C | 700 mV @ 1 A |
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