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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-8EWF02S-M3DIODE GEN PURP 200V 8A TO252AA Vishay General Semiconductor - Diodes Division |
2,143 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 100 µA @ 200 V | 200 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
VS-41HF10DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,643 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 100 V | 100 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
SE20DGHM3/IDIODE GEN PURP 400V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
3,564 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 400 V | 400 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
|
|
VS-41HFR10DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,550 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 100 V | 100 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
BYV98-100-TAPDIODE AVALANCHE 100V 4A SOD64 Vishay General Semiconductor - Diodes Division |
3,304 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |
|
VS-95PF40DIODE GEN PURP 400V 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,436 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
|
|
VS-80PF40DIODE GEN PURP 400V 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,570 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 80A | -55°C ~ 180°C | 1.46 V @ 220 A | |
|
|
SE20DJHM3/IDIODE GEN PURP 600V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
3,792 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 600 V | 600 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
|
|
BYW172F-TAPDIODE AVALANCHE 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,012 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
|
|
VS-95PFR40DIODE GEN PURP 400V 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,091 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 400 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
|
|
VS-80PFR40DIODE GEN PURP 400V 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,178 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 400 V | 80A | -55°C ~ 180°C | 1.4 V @ 220 A | |
|
|
V40DL45HM3_A/IDIODE SCHOTTKY 45V 40A TO263AC Vishay General Semiconductor - Diodes Division |
3,616 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 5 mA @ 45 V | 45 V | 40A | -40°C ~ 150°C | 660 mV @ 40 A |
|
|
BYV98-100-TRDIODE AVALANCHE 100V 4A SOD64 Vishay General Semiconductor - Diodes Division |
3,895 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |
|
|
BYW172F-TRDIODE AVALANCHE 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,043 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
|
|
SF5403-TAPDIODE GEN PURP 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,776 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
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VS-90APS12L-M3NEW INPUT DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division |
3,869 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 90A | -40°C ~ 150°C | 1.2 V @ 90 A | |
|
|
SF5403-TRDIODE GEN PURP 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,676 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
VS-80PF80WDIODE GEN PURP 800V 80A DO203AB Vishay General Semiconductor - Diodes Division |
2,597 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 800 V | 80A | -55°C ~ 180°C | 1.4 V @ 220 A | |
|
VI20100S-M3/4WDIODE SCHOTTKY 20A 100V TO-262AA Vishay General Semiconductor - Diodes Division |
3,201 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 900 mV @ 20 A | |
|
RGP25B-E3/54DIODE GEN PURP 100V 2.5A DO201AD Vishay General Semiconductor - Diodes Division |
3,476 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 2.5A | -65°C ~ 175°C | 1.3 V @ 2.5 A |
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