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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-C4PU3006L-N3DIODE GEN PURP 600V 15A TO247AD Vishay General Semiconductor - Diodes Division |
443 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 15 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 1.55 V @ 15 A |
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GP10J-4005E-M3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,856 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
MBRB1050HE3/81DIODE SCHOTTKY 50V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,507 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 50 V | 50 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
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RMPG06BHE3/54DIODE GEN PURP 100V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,891 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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GP10-4005HM3/73DIODE GEN PURP 500V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,201 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 500 V | 500 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
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MBRB1060HE3/81DIODE SCHOTTKY 60V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,399 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
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RMPG06DHE3/54DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,995 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
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GP10J-4005-M3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,186 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
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MBRB10H100HE3/81DIODE SCHOTTKY 100V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,532 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 4.5 µA @ 100 V | 100 V | 10A | -65°C ~ 175°C | 770 mV @ 10 A | |
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RMPG06GHE3/54DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,007 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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GP10-4007-E3/53DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,507 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
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MBRB10H45-E3/81DIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,704 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 175°C | 630 mV @ 10 A | |
|
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RMPG06JHE3/54DIODE GEN PURP 600V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,384 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 6.6pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
VS-CPU6006L-N3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
308 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 42 ns | 30 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.75 V @ 30 A |
|
VS-E5PH3012L-N3DIODE FREDS 1200V 30A TO-247 Vishay General Semiconductor - Diodes Division |
274 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 113 ns | 50 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 2.3 V @ 30 A |
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VS-EPH3006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
263 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 26 ns | 30 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2.65 V @ 30 A |
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VS-1N1200RADIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,342 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 2.5 mA @ 100 V | 100 V | 12A | -65°C ~ 200°C | 1.35 V @ 12 A | |
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GP10-4007E-E3/53DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,015 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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MBRB10H60-E3/81DIODE SCHOTTKY 60V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,009 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 175°C | 710 mV @ 10 A | |
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RMPG06KHE3/54DIODE GEN PURP 800V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,813 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 6.6pF @ 4V, 1MHz | 250 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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