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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FESF8DTHE3_A/PDIODE GEN PURP 200V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,229 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
|
VS-60EPF06-M3DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,376 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 100 µA @ 600 V | 600 V | 60A | -40°C ~ 150°C | 1.3 V @ 60 A | |
|
VS-12TQ045STRR-M3DIODE SCHOTTKY 45V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,242 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A | |
|
VS-6FR120DIODE GEN PURP 1.2KV 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,084 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 1200 V | 1200 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
|
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FESF8FTHE3_A/PDIODE GEN PURP 300V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,220 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
VS-40HFLR20S02DIODE GEN PURP 200V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,018 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A | |
|
|
VS-60EPF10-M3DIODE GEN PURP 1KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,428 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 480 ns | 100 µA @ 1000 V | 1000 V | 60A | -40°C ~ 150°C | 1.4 V @ 60 A | |
|
VS-30WQ10FNTRLHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,087 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 92pF @ 5V, 1MHz | - | 1 mA @ 100 V | 100 V | 3.5A | -40°C ~ 150°C | 810 mV @ 3 A |
|
|
FESF8GTHE3_A/PDIODE GEN PURP 400V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,021 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
VS-80APS16-M3DIODE GEN PURP 1.6KV 80A TO247AC Vishay General Semiconductor - Diodes Division |
3,620 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 80A | -40°C ~ 150°C | 1.17 V @ 80 A | |
|
|
VS-60EPF12-M3DIODE GEN PURP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,035 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 480 ns | 100 µA @ 1200 V | 1200 V | 60A | -40°C ~ 150°C | 1.4 V @ 60 A | |
|
|
VS-30WQ10FNTRRHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
2,317 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 92pF @ 5V, 1MHz | - | 1 mA @ 100 V | 100 V | 3.5A | -40°C ~ 150°C | 810 mV @ 3 A |
|
|
FESF8HTHE3_A/PDIODE GEN PURP 500V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,825 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A |
|
BY254P-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
145 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
V10PM15-M3/HDIODE SCHOTTKY TMBS 10A 150V SMP Vishay General Semiconductor - Diodes Division |
3,727 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 680pF @ 4V, 1MHz | - | 200 µA @ 150 V | 150 V | 10A | -40°C ~ 175°C | 1.08 V @ 10 A |
|
S3GHE3_A/HDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
843 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
|
|
SSC54-M3/57TDIODE SCHOTTKY 5A 40V DO-214AB Vishay General Semiconductor - Diodes Division |
2,778 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 490 mV @ 5 A | |
|
|
S3BHE3_A/HDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
788 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
|
S2M-E3/52TDIODE GEN PURP 1KV 1.5A DO214 Vishay General Semiconductor - Diodes Division |
1,475 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
|
MUR420-E3/54DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,359 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A |
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