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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GP10GEHE3/93DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,990 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
1N4002E-E3/53DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,729 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
MBRB7H35-E3/81DIODE SCHOTTKY 35V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
2,191 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 50 µA @ 35 V | 35 V | 7.5A | -65°C ~ 175°C | 630 mV @ 7.5 A | |
|
RS3AHE3/9ATDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,927 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
BAY80-TRDIODE GEN PURP 120V 250MA DO35 Vishay General Semiconductor - Diodes Division |
3,062 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 120 V | 120 V | 250mA (DC) | 175°C (Max) | 1.07 V @ 150 mA |
|
|
GP10GE-M3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,532 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N4002GPE-E3/91DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,471 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
MBRB7H35HE3/81DIODE SCHOTTKY 35V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,391 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 50 µA @ 35 V | 35 V | 7.5A | -65°C ~ 175°C | 630 mV @ 7.5 A | |
|
|
RS3BHE3/9ATDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,673 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
|
EGP10AHM3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,191 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
|
GP10GHM3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,935 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
1N4002GPEHE3/91DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,102 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
MBRB7H45-E3/81DIODE SCHOTTKY 45V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,224 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 50 µA @ 45 V | 45 V | 7.5A | -65°C ~ 175°C | 630 mV @ 7.5 A | |
|
|
RS3DHE3/9ATDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,001 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
|
EGP10A-M3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,335 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A | |
|
|
GP10G-M3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,672 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N4002GP-M3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,353 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
|
MBRB7H45HE3/81DIODE SCHOTTKY 45V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
2,687 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 50 µA @ 45 V | 45 V | 7.5A | -65°C ~ 175°C | 630 mV @ 7.5 A | |
|
|
RS3GHE3/9ATDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,187 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
|
EGP10BE-M3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,875 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
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