+86 075582561136
Carica BOM
Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP10-4003EHM3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,759 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
1N4246GP-M3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,781 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
|
UG12JT-E3/45DIODE GEN PURP 600V 12A TO220AC Vishay General Semiconductor - Diodes Division |
2,798 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 600 V | 600 V | 12A | 150°C (Max) | 1.75 V @ 12 A | |
|
|
MBR7H60-E3/45DIODE SCHOTTKY 60V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
2,104 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 50 µA @ 60 V | 60 V | 7.5A | -65°C ~ 175°C | 730 mV @ 7.5 A | |
|
|
1N4005GPHM3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,127 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
|
GP10-4003E-M3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,322 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
1N4247GP-M3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,228 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
|
|
UG12JTHE3/45DIODE GEN PURP 600V 12A TO220AC Vishay General Semiconductor - Diodes Division |
2,185 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 600 V | 600 V | 12A | 150°C (Max) | 1.75 V @ 12 A |
|
|
MBR7H60HE3/45DIODE SCHOTTKY 60V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
3,406 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 50 µA @ 60 V | 60 V | 7.5A | -65°C ~ 175°C | 730 mV @ 7.5 A | |
|
|
1N4005GP-M3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,474 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
|
GP10-4003HM3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,150 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
1N4249GP-M3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,329 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
|
|
UG15HT-E3/45DIODE GEN PURP 500V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,983 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 500 V | 500 V | 15A | 150°C (Max) | 1.75 V @ 15 A | ||
|
MBRB1035-E3/45DIODE SCHOTTKY 35V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,334 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
|
1N4006GP-M3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,723 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
|
GP10D-4003-M3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,611 | - |
RFQ |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N4933GP-M3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,885 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 200 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A | |
|
|
UG15HTHE3/45DIODE GEN PURP 500V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,309 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 500 V | 500 V | 15A | -55°C ~ 150°C | 1.75 V @ 15 A | ||
|
|
MBRB1035HE3/45DIODE SCHOTTKY 35V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,767 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
VS-150K30ADIODE GEN PURP 300V 150A DO205AA Vishay General Semiconductor - Diodes Division |
3,906 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 300 V | 300 V | 150A | -40°C ~ 200°C | 1.33 V @ 471 A |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
