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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MBRB735-E3/45DIODE SCHOTTKY 35V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
2,808 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
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VS-1EQH02-M3/HULTRAFAST RECTIFIER 1A DO-219AD Vishay General Semiconductor - Diodes Division |
3,340 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 200V | 23 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 970 mV @ 1 A |
|
NS8KT-E3/45DIODE GEN PURP 800V 8A TO220AC Vishay General Semiconductor - Diodes Division |
998 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
LL42-GS08DIODE SCHOTTKY 30V 200MA MINMELF Vishay General Semiconductor - Diodes Division |
3,105 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA | -55°C ~ 125°C | 650 mV @ 50 mA | |
|
|
NS8GT-E3/45DIODE GEN PURP 400V 8A TO220AC Vishay General Semiconductor - Diodes Division |
590 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
SD103AW-HE3-08DIODE SCHOTTKY 350MA 40V SOD123 Vishay General Semiconductor - Diodes Division |
3,735 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | 350mA (DC) | -55°C ~ 150°C | 600 mV @ 200 mA |
|
SS24SHE3_B/HDIODE SCHOTTKY 2A 40V DO-214AC Vishay General Semiconductor - Diodes Division |
3,793 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
VS-8ETH03-1-M3DIODE GEN PURP 300V 8A TO262AA Vishay General Semiconductor - Diodes Division |
985 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 20 µA @ 300 V | 300 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A |
|
|
VS-8ETU04-1-M3DIODE GEN PURP 400V 8A TO262AA Vishay General Semiconductor - Diodes Division |
895 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 8 A |
|
|
SS26S-E3/5ATDIODE SCHOTTKY 60V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,395 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 750 mV @ 2 A | |
|
|
SS12-E3/61TDIODE SCHOTTKY 20V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,142 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 1A | -65°C ~ 125°C | 500 mV @ 1 A | |
|
GP10B-M3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,589 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
1N5407GP-E3/73DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,461 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 400 V | 800 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
UGB5JT-E3/45DIODE GEN PURP 600V 5A TO263AB Vishay General Semiconductor - Diodes Division |
3,538 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.75 V @ 5 A | |
|
|
MBRB735HE3/45DIODE SCHOTTKY 35V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,306 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
|
|
GP10DE-M3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,610 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N5619GP-E3/73DIODE GEN PURP 600V 1A DO201AD Vishay General Semiconductor - Diodes Division |
2,029 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | 250 ns | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A | |
|
|
UGB5JTHE3/45DIODE GEN PURP 600V 5A TO263AB Vishay General Semiconductor - Diodes Division |
2,317 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.75 V @ 5 A |
|
|
MBRB745-E3/45DIODE SCHOTTKY 45V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,496 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
|
|
GP10DHM3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,247 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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