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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RGP10KHE3/53DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,508 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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GP10Y-M3/54DIODE GEN PURP 1.6KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,371 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1600 V | 1600 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | |
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EGP10DHE3/53DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,330 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
MBRF16H35HE3/45DIODE SCHOTTKY 35V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,537 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 660 mV @ 16 A | |
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RGP10KHM3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,197 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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MB3035S-E3/8WDIODE SCHOTTKY 35V 30A TO263AB Vishay General Semiconductor - Diodes Division |
2,421 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 980pF @ 4V, 1MHz | - | 200 µA @ 35 V | 35 V | 30A | -65°C ~ 150°C | 700 mV @ 30 A | |
|
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EGP10DHM3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,513 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
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MBRF16H45-E3/45DIODE SCHOTTKY 45V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
3,303 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 45 V | 45 V | 16A | -65°C ~ 150°C | 660 mV @ 16 A | |
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RGP10K-M3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,922 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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MBRB10H35-E3/81DIODE SCHOTTKY 35V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,701 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 175°C | 850 mV @ 20 A | |
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BAT42W-E3-08DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
2,254 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 650 mV @ 50 mA | |
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UGF8JT-E3/45DIODE GEN PURP 600V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
768 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 30 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.75 V @ 8 A | |
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V2PM10L-M3/HSCHOTTKY RECTIFIER 2A 100V SMP Vishay General Semiconductor - Diodes Division |
3,808 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 195pF @ 4V, 1MHz | - | 100 µA @ 100 V | 100 V | 1.9A | -40°C ~ 175°C | 550 mV @ 1 A |
|
SBYV27-200-E3/73DIODE GEN PURP 200V 2A DO204AC Vishay General Semiconductor - Diodes Division |
927 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |
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EGP10D-M3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,740 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A | |
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MBRF16H45HE3/45DIODE SCHOTTKY 45V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,596 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 45 V | 45 V | 16A | -65°C ~ 150°C | 660 mV @ 16 A | |
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RGP10M-E3/53DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,760 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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MBRB10H35HE3/81DIODE SCHOTTKY 35V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,779 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 175°C | 850 mV @ 20 A |
|
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EGP10FHM3/73DIODE GEN PURP 300V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,612 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
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MBRF16H60-E3/45DIODE SCHOTTKY 60V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,726 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 16A | -65°C ~ 150°C | 730 mV @ 16 A |
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