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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-10ETF10STRLPBFDIODE GEN PURP 1KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,513 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
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RS1PDHM3/85ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,029 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
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VS-10ETF10STRRPBFDIODE GEN PURP 1KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,570 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
GL34B-E3/98DIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,330 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.2 V @ 500 mA |
|
UF5401-E3/73DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,867 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
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BAT54-E3-08DIODE SCHOTTKY 30V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
2,082 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA | |
|
|
EGL34G-E3/98DIODE GEN PURP 400V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,875 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 500mA | -65°C ~ 175°C | 1.35 V @ 500 mA |
|
BAV21W-E3-08DIODE GEN PURP 200V 250MA SOD123 Vishay General Semiconductor - Diodes Division |
10,740 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 200 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA | |
|
S3MHE3_A/HDIODE GEN PURP 1KV 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,960 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
|
|
BYM07-100-E3/98DIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,196 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
|
SB520A-E3/54DIODE SCHOTTKY 20V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,104 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 5A | -65°C ~ 150°C | 500 mV @ 5 A | |
|
|
BYM07-200-E3/98DIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,454 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
SS5P3-M3/86ADIODE SCHOTTKY 30V 5A TO277A Vishay General Semiconductor - Diodes Division |
3,617 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 280pF @ 4V, 1MHz | - | 250 µA @ 30 V | 30 V | 5A | -55°C ~ 150°C | 520 mV @ 5 A |
|
SSA24HE3_A/HDIODE SCHOTTKY 30V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,593 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 40 V | 2A | -65°C ~ 150°C | 490 mV @ 2 A |
|
|
AU2PM-M3/86ADIODE AVALANCHE 1KV 1.3A TO277 Vishay General Semiconductor - Diodes Division |
3,237 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 29pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 1.3A (DC) | -55°C ~ 175°C | 2.5 V @ 2 A |
|
|
SS5P5-M3/86ADIODE SCHOTTKY 50V 5A TO277A Vishay General Semiconductor - Diodes Division |
2,372 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 4V, 1MHz | - | 150 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 690 mV @ 5 A |
|
MURS360S-E3/5BTDIODE GEN PURP 600V 3A DO214AA Vishay General Semiconductor - Diodes Division |
2,856 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.45 V @ 3 A | |
|
|
GP30M-E3/73DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,995 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 5 µA @ 1000 V | 1000 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
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BYM13-40-E3/97DIODE SCHOTTKY 40V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,318 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
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MURS340SHE3_A/IDIODE GEN PURP 400V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,794 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 1.5A | -65°C ~ 175°C | 1.45 V @ 3 A |
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