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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-HFA08TB120S-M3DIODE GEN PURP 1200V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,523 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 95 ns | 10 µA @ 1200 V | 1200 V | 8A (DC) | -55°C ~ 150°C | 4.3 V @ 16 A |
|
VS-18TQ045-M3DIODE SCHOTTKY 18A 45V TO-220AC Vishay General Semiconductor - Diodes Division |
2,329 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 45 V | 45 V | 18A | -55°C ~ 175°C | 720 mV @ 36 A | |
|
VT5202-M3/4WDIODE SCHOTTKY 200V 5A TO220AC Vishay General Semiconductor - Diodes Division |
2,526 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1216pF @ 4V, 1MHz | - | 150 µA @ 200 V | 200 V | 5A | -40°C ~ 175°C | 880 mV @ 5 A |
|
SB2H100-E3/54DIODE SCHOTTKY 100V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,247 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 790 mV @ 2 A | ||
|
VS-ETU1506FP-M3DIODE GEN PURP 600V 15A TO220FP Vishay General Semiconductor - Diodes Division |
2,618 | - |
RFQ |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.9 V @ 15 A | |
|
VS-4EWH02FN-M3DIODE GEN PURP 200V 4A DPAK Vishay General Semiconductor - Diodes Division |
3,331 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 3 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 950 mV @ 4 A | |
|
BYM10-50-E3/96DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,736 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
VS-31DQ10GTRDIODE SCHOTTKY 100V 3.3A C16 Vishay General Semiconductor - Diodes Division |
3,517 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 5V, 1MHz | - | 100 µA @ 100 V | 100 V | 3.3A | -40°C ~ 150°C | 850 mV @ 3 A | |
|
VS-50SQ060GTRDIODE SCHOTTKY 60V 5A AXIAL Vishay General Semiconductor - Diodes Division |
3,658 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 500pF @ 5V, 1MHz | - | 150 µA @ 60 V | 60 V | 5A | -55°C ~ 175°C | 660 mV @ 5 A | |
|
|
MBRB1660-E3/81DIODE SCHOTTKY 60V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,066 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 60 V | 60 V | 16A | -65°C ~ 150°C | 750 mV @ 16 A | |
|
|
FESB8JT-E3/81DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,295 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A | |
|
|
VS-50SQ080GTRDIODE SCHOTTKY 80V 5A AXIAL Vishay General Semiconductor - Diodes Division |
3,593 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 500pF @ 5V, 1MHz | - | 150 µA @ 80 V | 80 V | 5A | -55°C ~ 175°C | 660 mV @ 5 A | |
|
MPG06GHE3_A/73DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,379 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
1N5404-E3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
16,106 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
VS-5EWH06FN-M3DIODE GEN PURP 600V 5A D-PAK Vishay General Semiconductor - Diodes Division |
3,840 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
SS24-E3/5BTDIODE SCHOTTKY 40V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,009 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -65°C ~ 125°C | 500 mV @ 2 A | |
|
|
VS-50SQ100GTRDIODE SCHOTTKY 100V 5A AXIAL Vishay General Semiconductor - Diodes Division |
2,124 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 500pF @ 5V, 1MHz | - | 150 µA @ 100 V | 100 V | 5A | -55°C ~ 175°C | 660 mV @ 5 A | |
|
|
BY228GP-E3/54DIODE GEN PURP 1.5KV 2.5A DO201 Vishay General Semiconductor - Diodes Division |
3,908 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 2 µs | 5 µA @ 1500 V | 1500 V | 2.5A | -65°C ~ 150°C | 1.6 V @ 2.5 A |
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|
VSSAF5M10-M3/HDIODE SCHOTTKY 100V 5A DO221AC Vishay General Semiconductor - Diodes Division |
2,512 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 470pF @ 4V, 1MHz | - | 400 µA @ 100 V | 100 V | 5A | -40°C ~ 175°C | 790 mV @ 5 A |
|
|
1N5400-E3/54DIODE GEN PURP 50V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,839 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A |
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