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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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US1DHE3_A/IDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,039 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
U2D-M3/5BTDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,909 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 27 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
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US1KHE3_A/IDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,942 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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AR1PD-M3/85ADIODE AVALANCHE 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,713 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
|
AR1PG-M3/85ADIODE AVALANCHE 400V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,277 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
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MURS160-M3/5BTDIODE GEN PURP 600V 1A DO214AA Vishay General Semiconductor - Diodes Division |
3,251 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A | |
|
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AR1PJ-M3/85ADIODE AVALANCHE 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,675 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 12.5pF @ 4V, 1MHz | 140 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
MPG06BHE3_A/73DIODE GEN PURP 100V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,378 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
MPG06DHE3_A/73DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,680 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
MPG06JHE3_A/73DIODE GEN PURP 600V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,286 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
MPG06KHE3_A/73DIODE GEN PURP 800V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,714 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
VSSA210HM3_A/IDIODE SCHOTTKY 100V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,741 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 175pF @ 4V, 1MHz | - | 150 µA @ 100 V | 100 V | 2A (DC) | -40°C ~ 150°C | 700 mV @ 2 A |
|
|
MPG06MHE3_A/73DIODE GEN PURP 1KV 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,471 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
ESH1DHM3_A/I1A 200V SM ULTRAFAST RECT SMA Vishay General Semiconductor - Diodes Division |
3,798 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
SL02-M-18DIODE SCHOTTKY 20V DO219-M Vishay General Semiconductor - Diodes Division |
3,292 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | 10 ns | 250 µA @ 20 V | 20 V | 1.1A | 125°C (Max) | 420 mV @ 1.1 A |
|
|
VS-2ENH02HM3/84AFRED PT RECTIFIER AEC-Q101 SMP Vishay General Semiconductor - Diodes Division |
3,348 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 28 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1 V @ 2 A |
|
|
ESH1DHM3_A/H1A 200V SM ULTRAFAST RECT SMA Vishay General Semiconductor - Diodes Division |
2,160 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
|
SL03-M-18DIODE SCHOTTKY 30V DO219-M Vishay General Semiconductor - Diodes Division |
2,470 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | 10 ns | 130 µA @ 30 V | 30 V | 1.1A | 125°C (Max) | 430 mV @ 1.1 A |
|
|
SL02-M-08DIODE SCHOTTKY 20V DO219-M Vishay General Semiconductor - Diodes Division |
3,846 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | 10 ns | 250 µA @ 20 V | 20 V | 1.1A | 125°C (Max) | 420 mV @ 1.1 A |
|
UF1005-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,265 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 180°C | 1.7 V @ 1 A |
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