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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GL41T-E3/97DIODE GEN PURP 1.3KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,717 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1300 V | 1300 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
SB2J-M3/5BTDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,301 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
RGL34JHE3/98DIODE GEN PURP 600V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,782 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
|
SB2K-M3/5BTDIODE GEN PURP 800V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,040 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
BYG10D-M3/TR3DIODE AVALANCHE 200V 1.5A Vishay General Semiconductor - Diodes Division |
2,474 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
EGF1B-1HE3_A/HDIODE GEN PURP 100V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,117 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
UH2C-M3/5BTDIODE GEN PURP 2A SMA Vishay General Semiconductor - Diodes Division |
2,253 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 42pF @ 4V, 1MHz | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A | |
|
|
EGF1D-2HE3_A/HDIODE GEN PURP 200V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,271 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
UH6PD-M3H/IDIODE GEN PURP 6A TO277A Vishay General Semiconductor - Diodes Division |
2,574 | - |
RFQ |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 80pF @ 4V, 1MHz | 40 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.05 V @ 6 A | |
|
|
RGF1KHE3_A/IDIODE SW 800V 1A DO-214BA Vishay General Semiconductor - Diodes Division |
3,544 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
RGF1M-7000HE3_A/IDIODE SW 1000V 1A DO-214BA Vishay General Semiconductor - Diodes Division |
2,530 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
SB2M-M3/5BTDIODE GEN PURP 1KV 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,456 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
BYG10G-M3/TR3DIODE AVALANCHE 400V 1.5A Vishay General Semiconductor - Diodes Division |
3,444 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
|
BYG10J-M3/TR3DIODE AVALANCHE 600V 1.5A Vishay General Semiconductor - Diodes Division |
2,302 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
|
S2KHE3_A/HDIODE GEN PURP 800V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,006 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
BAS382-TR3DIODE SCHOTTKY 50V 30MA MICROMLF Vishay General Semiconductor - Diodes Division |
3,882 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 1.6pF @ 1V, 1MHz | - | 200 nA @ 50 V | 50 V | 30mA | 125°C (Max) | 1 V @ 15 mA |
|
|
US1JHM3_A/H1A 600V SM ULTRAFAST RECT SMA Vishay General Semiconductor - Diodes Division |
2,312 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
BYG10K-M3/TR3DIODE AVALANCHE 800V 1.5A Vishay General Semiconductor - Diodes Division |
2,385 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
BAS85-M-18DIODE SCHOTTKY 30V 200MA SOD80 Vishay General Semiconductor - Diodes Division |
3,994 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | - | 2 µA @ 25 V | 30 V | 200mA | 125°C (Max) | 800 mV @ 100 mA |
|
|
US1JHM3_A/I1A 600V SM ULTRAFAST RECT SMA Vishay General Semiconductor - Diodes Division |
2,983 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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