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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MURS260-M3/52TDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,050 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.45 V @ 2 A | |
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GL34BHE3/98DIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,336 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.2 V @ 500 mA |
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SE50PABHM3/IDIODE GEN PURP 100V 5A DO221BC Vishay General Semiconductor - Diodes Division |
3,532 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 32pF @ 4V, 1MHz | 2 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 175°C | 1.16 V @ 5 A |
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BYG21M-M3/TR3DIODE AVALANCHE 1KV 1.5A Vishay General Semiconductor - Diodes Division |
3,296 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A | |
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MURS340S-M3/52TDIODE GEN PURP 400V 3A DO214AA Vishay General Semiconductor - Diodes Division |
2,533 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.28 V @ 4 A | |
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GL34DHE3/98DIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,780 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.2 V @ 500 mA |
|
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SE50PAB-M3/IDIODE GEN PURP 100V 5A DO221BC Vishay General Semiconductor - Diodes Division |
2,301 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 32pF @ 4V, 1MHz | 2 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 175°C | 1.16 V @ 5 A |
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BYG20D-M3/TRDIODE AVALANCHE 200V 1.5A Vishay General Semiconductor - Diodes Division |
3,102 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
|
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MURS360S-M3/52TDIODE GEN PURP 600V 3A DO214AA Vishay General Semiconductor - Diodes Division |
2,753 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.28 V @ 4 A | |
|
|
GL34GHE3/98DIODE GEN PURP 400V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,457 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 500mA | -65°C ~ 175°C | 1.2 V @ 500 mA |
|
|
SE50PADHM3/IDIODE GEN PURP 200V 5A DO221BC Vishay General Semiconductor - Diodes Division |
2,028 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 32pF @ 4V, 1MHz | 2 µs | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 175°C | 1.16 V @ 5 A |
|
|
BYG20G-M3/TRDIODE AVALANCHE 400V 1.5A Vishay General Semiconductor - Diodes Division |
2,473 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
|
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GL34JHE3/98DIODE GEN PURP 600V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,071 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 600 V | 600 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
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SE50PAD-M3/IDIODE GEN PURP 200V 5A DO221BC Vishay General Semiconductor - Diodes Division |
3,063 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 32pF @ 4V, 1MHz | 2 µs | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 175°C | 1.16 V @ 5 A |
|
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BYG20J-M3/TRDIODE AVALANCHE 600V 1.5A Vishay General Semiconductor - Diodes Division |
2,265 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
|
TY056S150A6OTDIODE 150V TMBS Vishay General Semiconductor - Diodes Division |
3,600 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 5A (DC) | -55°C ~ 150°C | 1.41 V @ 5 A | |
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EGP10G-E3S/73DIODE GEN PURP DO204 Vishay General Semiconductor - Diodes Division |
2,800 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
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GP10-4002-E3S/73DIODE GEN PURP DO204 Vishay General Semiconductor - Diodes Division |
3,415 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
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RGP02-17E-E3S/73DIODE GEN PURP DO204 Vishay General Semiconductor - Diodes Division |
2,778 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 1700 V | 1700 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
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BYG20DHE3_A/HDIODE AVALANCHE 200V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,131 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
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- 15,000+ Magazzino in stock
