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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SB350-E3/73DIODE SCHOTTKY 50V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,855 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 3A | -65°C ~ 150°C | 680 mV @ 3 A | |
|
SE10FJHM3/HDIODE GEN PURP 600V 1A DO219AB Vishay General Semiconductor - Diodes Division |
3,327 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.5pF @ 4V, 1MHz | 780 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
GP10-4004-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,100 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 400 V | 1A | - | - | |
|
ESH2C-E3/52TDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,285 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | |
|
VS-20MQ040-M3/5ATDIODE SCHOTTKY 2A 40V SMA Vishay General Semiconductor - Diodes Division |
3,526 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 38pF @ 10V, 1MHz | - | 500 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 690 mV @ 2 A | |
|
|
V2FM15HM3/I2A,150V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
2,999 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 4V, 1MHz | - | 50 µA @ 150 V | 150 V | 2A | -40°C ~ 175°C | 1.46 V @ 2 A |
|
|
GP10-4005-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,417 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 600 V | 1A | - | - | |
|
|
ESH2BHE3_A/HDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,197 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 25 ns | 10 µA @ 50 V | 100 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A |
|
CS3K-E3/HDIODE GEN PURP 800V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,947 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 26pF @ 4V, 1MHz | 2.8 µs | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.2 V @ 3 A | |
|
|
CS3M-E3/HDIODE GEN PURP 1KV 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,020 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 26pF @ 4V, 1MHz | 2.8 µs | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.2 V @ 3 A | |
|
|
CSA2D-E3/HDIODE GEN PURP 200V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,114 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 11pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
CSA2G-E3/HDIODE GEN PURP 400V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,320 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 11pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
VS-20MQ060-M3/5ATDIODE SCHOTTKY 60V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,994 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 31pF @ 10V, 1MHz | - | 500 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 780 mV @ 2 A | |
|
|
GP10-4006-E3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,117 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 800 V | 1A | - | - | |
|
|
ESH2BHE3_A/IDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,268 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 25 ns | 10 µA @ 50 V | 100 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A |
|
|
GP10-4007-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,520 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 1000 V | 1A | - | - | |
|
|
ESH2CHE3_A/HDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,436 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 25 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A |
|
|
SS15-E3/5ATDIODE SCHOTTKY 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,610 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 750 mV @ 1 A | |
|
|
GP10A-E3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,668 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
CSA2J-E3/HDIODE GEN PURP 600V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,586 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 11pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A |
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