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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SSC53LHE3_A/IDIODE SCHOTTKY 30V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,314 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 700 µA @ 30 V | 30 V | 5A | -65°C ~ 150°C | 450 mV @ 5 A |
|
V8P12HM3_A/IDIODE SCHOTTKY 120V 8A TO277A Vishay General Semiconductor - Diodes Division |
3,650 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 120 V | 120 V | 8A | -40°C ~ 150°C | 840 mV @ 8 A |
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SS2P3L-M3/85ADIODE SCHOTTKY 30V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,896 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
|
BYT54B-TRDIODE AVALANCHE 100V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
3,530 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 100 V | 100 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
BYT53F-TAPDIODE AVALANCHE 300V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
2,217 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 300 V | 300 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SS2P3-M3/85ADIODE SCHOTTKY 30V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,162 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 150 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
|
BYV12-TRDIODE AVALANCHE 100V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,753 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
BYT53F-TRDIODE AVALANCHE 300V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
3,134 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 300 V | 300 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SS2P4HM3/85ADIODE SCHOTTKY 40V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,369 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 150 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
|
BYV26A-TRDIODE AVALANCHE 200V 1A SOD57 Vishay General Semiconductor - Diodes Division |
2,520 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 2.5 V @ 1 A | |
|
|
BYT54M-TRDIODE AVALANCHE 1KV 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
2,903 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 1000 V | 1000 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
SS2P4-M3/85ADIODE SCHOTTKY 40V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,271 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 150 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
|
BYV37-TRDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,925 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SF4002-TAPDIODE AVAL 1A 100V SOD-57 Vishay General Semiconductor - Diodes Division |
3,288 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
SS3P4-M3/85ADIODE SCHOTTKY 40V 3A DO220AA Vishay General Semiconductor - Diodes Division |
2,708 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 150 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 600 mV @ 3 A |
|
|
BYX83TRDIODE AVALANCHE 400V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,113 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 20pF @ 4V, 1MHz | 4 µs | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
SF4002-TRDIODE AVAL 1A 100V SOD-57 Vishay General Semiconductor - Diodes Division |
3,861 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 600 V | 100 V | 1A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
V8PM12HM3_A/IDIODE SCHOTTKY 120V 3.6A TO277A Vishay General Semiconductor - Diodes Division |
3,341 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 120 V | 120 V | 3.6A | -40°C ~ 150°C | 840 mV @ 8 A |
|
UF1007-M3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,750 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | ||
|
VSSAF5L45-M3/6BDIODE SCHOTTKY 45V 3A DO221AC Vishay General Semiconductor - Diodes Division |
2,459 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 740pF @ 4V, 1MHz | - | 650 µA @ 45 V | 45 V | 3A | -40°C ~ 150°C | 560 mV @ 5 A |
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