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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS16HE3_B/IDIODE SCHOTTKY 60V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,746 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 1A | -65°C ~ 150°C | 750 mV @ 1 A |
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B140-E3/61TDIODE SCHOTTKY 40V 1A DO214AC Vishay General Semiconductor - Diodes Division |
5,169 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 520 mV @ 1 A | |
|
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S1JHE3_A/HDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
4,378 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
SS14-E3/61TDIODE SCHOTTKY 40V 1A DO214AC Vishay General Semiconductor - Diodes Division |
83,733 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 500 mV @ 1 A | |
|
S07J-GS08DIODE GEN PURP 600V 1.5A DO219AB Vishay General Semiconductor - Diodes Division |
7,395 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
VS-E5TX1506-M315A, 600V, "X" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
1,140 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 33 ns | 10 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 2.1 V @ 15 A |
|
|
VS-E5TH1506-M315A, 600V, "H" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
1,018 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 38 ns | 10 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 1.6 V @ 15 A |
|
|
ES1D-E3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
25,884 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A | |
|
GP02-35-E3/54DIODE GEN PURP 3.5KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
3,684 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 3500 V | 3500 V | 250mA | -65°C ~ 175°C | 3 V @ 1 A |
|
|
ES1B-E3/61TDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
520 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A | |
|
SB5H90-E3/54DIODE SCHOTTKY 90V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,669 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 90 V | 90 V | 5A | 175°C (Max) | 800 mV @ 5 A | |
|
VI20100S-E3/4WDIODE SCHOTTKY 100V 20A TO262AA Vishay General Semiconductor - Diodes Division |
2,493 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 900 mV @ 20 A |
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SS3P3-M3/84ADIODE SCHOTTKY 30V 3A DO220AA Vishay General Semiconductor - Diodes Division |
17,456 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 580 mV @ 3 A |
|
|
BYG23M-E3/TR3DIODE AVALANCHE 1KV 1.5A Vishay General Semiconductor - Diodes Division |
13,000 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
VS-HFA04TB60SL-M3DIODE GEN PURP 600V 4A D2PAK Vishay General Semiconductor - Diodes Division |
3,764 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A (DC) | -55°C ~ 150°C | 2.2 V @ 8 A |
|
VS-20L15T-M3DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division |
3,820 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 2000pF @ 5V, 1MHz | - | 10 mA @ 15 V | 15 V | 20A | -55°C ~ 125°C | 520 mV @ 40 A | |
|
V12PM15-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,058 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 860pF @ 4V, 1MHz | - | 250 µA @ 150 V | 150 V | 12A | -40°C ~ 175°C | 1.08 V @ 12 A |
|
FESF8FT-E3/45DIODE GEN PURP 300V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,172 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
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VT1045BP-M3/4WDIODE SCHOTTKY 45V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,338 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 45 V | 45 V | 10A (DC) | 200°C (Max) | 680 mV @ 10 A |
|
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FESF8HT-E3/45DIODE GEN PURP 500V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,346 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A |
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