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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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V10P20-M3/86ADIODE SCHOTTKY 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
1,340 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 200 V | 200 V | 2.4A | -40°C ~ 150°C | 1.34 V @ 10 A |
|
|
SS8PH9-M3/87ADIODE SCHOTTKY 90V 8A TO277A Vishay General Semiconductor - Diodes Division |
4,425 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 140pF @ 4V, 1MHz | - | 2 µA @ 90 V | 90 V | 8A | -55°C ~ 175°C | 900 mV @ 8 A |
|
VS-MBR745-M3DIODE SCHOTTKY 45V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
1,344 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 400pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
|
|
V10PM6-M3/HDIODE SCHOTTKY TMBS 10A 60V SMPC Vishay General Semiconductor - Diodes Division |
1,227 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1650pF @ 4V, 1MHz | - | 800 µA @ 60 V | 60 V | 10A | -40°C ~ 175°C | 640 mV @ 10 A |
|
|
V10PM6HM3/HDIODE SCHOTTKY TMBS 10A 60V SMPC Vishay General Semiconductor - Diodes Division |
3,865 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1650pF @ 4V, 1MHz | - | 800 µA @ 60 V | 60 V | 10A | -40°C ~ 175°C | 640 mV @ 10 A |
|
|
FES8GT-E3/45DIODE GEN PURP 400V 8A TO220AC Vishay General Semiconductor - Diodes Division |
1,576 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
BYX86TAPDIODE AVALANCHE 1KV 2A SOD57 Vishay General Semiconductor - Diodes Division |
4,445 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 20pF @ 4V, 1MHz | 4 µs | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
V20100SG-E3/4WDIODE SCHOTTKY 100V 20A TO220AB Vishay General Semiconductor - Diodes Division |
1,256 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 1.07 V @ 20 A |
|
|
BYV16-TAPDIODE AVALANCHE 1KV 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,368 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
VS-15EWX06FN-M3DIODE GEN PURP 600V 15A DPAK Vishay General Semiconductor - Diodes Division |
2,990 | - |
RFQ |
Scheda tecnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 22 ns | 200 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A |
|
|
VT2045BP-M3/4WDIODE SCHOTTKY 45V 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,467 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 2 mA @ 45 V | 45 V | 20A (DC) | 200°C (Max) | 660 mV @ 20 A |
|
|
VT3080S-E3/4WDIODE SCHOTTKY 30A 80V TO-220AB Vishay General Semiconductor - Diodes Division |
1,198 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 80 V | 80 V | 30A | -55°C ~ 150°C | 950 mV @ 30 A |
|
VS-ETH1506FP-M3DIODE GEN PURP 600V 15A TO220FP Vishay General Semiconductor - Diodes Division |
3,244 | - |
RFQ |
Scheda tecnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 29 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.45 V @ 15 A |
|
|
VS-30WQ06FNHM3DIODE SCHOTTKY 60V 3.5A DPAK Vishay General Semiconductor - Diodes Division |
8,956 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 5V, 1MHz | - | 2 mA @ 60 V | 60 V | 3.5A | -40°C ~ 150°C | 610 mV @ 3 A |
|
|
VT3045BP-M3/4WDIODE SCHOTTKY 45V 30A TO220AC Vishay General Semiconductor - Diodes Division |
2,122 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 2 mA @ 45 V | 45 V | 30A (DC) | 200°C (Max) | 700 mV @ 30 A |
|
ES3DHE3_A/IDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
1,998 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
|
|
VS-ETH3007THN3DIODE GEN PURP 650V 30A TO220AC Vishay General Semiconductor - Diodes Division |
1,755 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 37 ns | 30 µA @ 650 V | 650 V | 30A | -55°C ~ 175°C | 2.1 V @ 30 A |
|
|
VS-HFA04SD60S-M3DIODE GEN PURP 600V 4A TO252AA Vishay General Semiconductor - Diodes Division |
3,441 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | - | Standard | Active | Surface Mount | - | - | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.8 V @ 4 A |
|
|
BYT54M-TAPDIODE AVALANCHE 1KV 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
1,375 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 1000 V | 1000 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
VT4045BP-M3/4WDIODE SCHOTTKY 45V 40A TO220AC Vishay General Semiconductor - Diodes Division |
1,427 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 3 mA @ 45 V | 45 V | 40A (DC) | 200°C (Max) | 670 mV @ 40 A |
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