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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYT77-TAPDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,923 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 250 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
VS-4ESH01-M3/87ADIODE GEN PURP 100V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,224 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 4 V | 100 V | 4A | -65°C ~ 175°C | 930 mV @ 4 A |
|
VB10150S-M3/4WDIODE SCHOTTKY 10A 150V TO-263AB Vishay General Semiconductor - Diodes Division |
3,352 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.2 V @ 10 A | |
|
VS-20TQ045SHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
3,087 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A |
|
|
BYW73-TAPDIODE AVALANCHE 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,007 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
VS-4ESH02-M3/87ADIODE GEN PURP 200V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,152 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 930 mV @ 4 A |
|
BYT62-TRDIODE AVALANCH 2.4KV 350MA SOD57 Vishay General Semiconductor - Diodes Division |
3,739 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 5 µs | 5 µA @ 2400 V | 2400 V | 350mA | 175°C (Max) | 3.6 V @ 1 A | |
|
|
VS-6TQ040STRR-M3DIODE SCHOTTKY 40V 6A TO263AB Vishay General Semiconductor - Diodes Division |
3,238 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 800 µA @ 40 V | 40 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A | |
|
|
BYW83TAPDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,814 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
ES3A-E3/9ATDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,633 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
VBT5202-M3/4WDIODE SCHOTTKY 200V 5A TO263AB Vishay General Semiconductor - Diodes Division |
2,725 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 200 V | 200 V | 5A | -40°C ~ 175°C | 880 mV @ 5 A |
|
|
VS-MBRB735TRL-M3DIODE SCHOTTKY 35V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,723 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 570 mV @ 7.5 A | |
|
|
BYT56J-TRDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,037 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
|
|
ES3C-E3/9ATDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,862 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
VS-6TQ045HN3DIODE SCHOTTKY 45V 6A TO220AC Vishay General Semiconductor - Diodes Division |
2,198 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 400pF @ 5V, 1MHz | - | 800 µA @ 45 V | 45 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A |
|
|
VS-MBRB745TRL-M3DIODE SCHOTTKY 45V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,404 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 570 mV @ 7.5 A | |
|
|
BYT77-TRDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,923 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 250 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
|
VS-8ETL06STRL-M3DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,902 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
|
|
VS-MBRB745TRR-M3DIODE SCHOTTKY 45V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
2,509 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 570 mV @ 7.5 A | |
|
|
VS-10TQ035S-M3DIODE SCHOTTKY 35V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,837 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 2 mA @ 35 V | 35 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A |
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