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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-10ETF06STRL-M3DIODE GEN PURP 600V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,074 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
EGP31D-E3/CDIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,690 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 2 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
RS3BHE3_A/HDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,569 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
|
|
EGP51A-E3/CDIODE GEN PURP 50V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,534 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 5A | -65°C ~ 175°C | 960 mV @ 5 A |
|
|
RS3DHE3_A/HDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,154 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
|
|
EGP51B-E3/CDIODE GEN PURP 100V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,362 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 5A | -65°C ~ 175°C | 960 mV @ 5 A |
|
|
RS3GHE3_A/HDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,694 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
|
|
VS-APU3006L-N3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
2,385 | - |
RFQ |
Scheda tecnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2 V @ 30 A |
|
|
UGB8JTHE3_A/IDIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,050 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.75 V @ 8 A |
|
V8P6-M3/86ADIODE SCHOTTKY 60V 4.2A TO277A Vishay General Semiconductor - Diodes Division |
2,726 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 60 V | 60 V | 4.2A | -40°C ~ 150°C | 610 mV @ 8 A |
|
|
EGP51C-E3/CDIODE GEN PURP 150V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,483 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 5A | -65°C ~ 175°C | 960 mV @ 5 A |
|
VS-30WQ06FNTRL-M3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,233 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 5V, 1MHz | - | 2 mA @ 60 V | 60 V | 3.5A | -40°C ~ 150°C | 610 mV @ 3 A | |
|
|
VS-MBRB1645TRL-M3DIODE SCHOTTKY 45V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,331 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 200 µA @ 35 V | 45 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | ||
|
|
V8P6-M3/87ADIODE SCHOTTKY 60V 4.2A TO277A Vishay General Semiconductor - Diodes Division |
3,961 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 60 V | 60 V | 4.2A | -40°C ~ 150°C | 610 mV @ 8 A |
|
|
EGP51D-E3/CDIODE GEN PURP 200V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,813 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 5A | -65°C ~ 175°C | 960 mV @ 5 A |
|
|
VS-30WQ06FNTRR-M3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,181 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 5V, 1MHz | - | 2 mA @ 60 V | 60 V | 3.5A | -40°C ~ 150°C | 610 mV @ 3 A | |
|
|
VS-MBRB1645TRR-M3DIODE SCHOTTKY 45V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,544 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 200 µA @ 35 V | 45 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | ||
|
|
V8P8-M3/86ADIODE SCHOTTKY 80V 4A TO277A Vishay General Semiconductor - Diodes Division |
2,354 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 700 µA @ 80 V | 80 V | 4A | -40°C ~ 150°C | 660 mV @ 8 A |
|
|
EGP31F-E3/CDIODE GEN PURP 300V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,138 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 48pF @ 4V, 1MHz | 50 ns | 3 µA @ 300 V | 300 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A |
|
|
S10CG-M3/IDIODE GEN PURP 400V 10A DO214AB Vishay General Semiconductor - Diodes Division |
3,629 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 5 µs | 10 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1 V @ 10 A |
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