Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BYG21MHM3_A/H

BYG21MHM3_A/H

DIODE AVALANCHE 1KV 1.5A DO214AC

Vishay General Semiconductor - Diodes Division
2,472 -

RFQ

BYG21MHM3_A/H

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount - 120 ns 1 µA @ 1000 V 1000 V 1.5A -55°C ~ 150°C 1.6 V @ 1.5 A
BYG21MHM3_A/I

BYG21MHM3_A/I

DIODE AVALANCHE 1KV 1.5A DO214AC

Vishay General Semiconductor - Diodes Division
3,996 -

RFQ

BYG21MHM3_A/I

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount - 120 ns 1 µA @ 1000 V 1000 V 1.5A -55°C ~ 150°C 1.6 V @ 1.5 A
ESH1BHE3_A/I

ESH1BHE3_A/I

DIODE GEN PURP 100V 1A DO214AC

Vishay General Semiconductor - Diodes Division
3,669 -

RFQ

ESH1BHE3_A/I

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 4V, 1MHz 25 ns 1 µA @ 100 V 100 V 1A -55°C ~ 175°C 900 mV @ 1 A
MURS340S-E3/5BT

MURS340S-E3/5BT

DIODE GEN PURP 400V 3A DO214AB

Vishay General Semiconductor - Diodes Division
3,751 -

RFQ

MURS340S-E3/5BT

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 75 ns 5 µA @ 400 V 400 V 3A -65°C ~ 175°C 1.45 V @ 3 A
MURS340S-E3/52T

MURS340S-E3/52T

DIODE GEN PURP 400V 3A DO214AB

Vishay General Semiconductor - Diodes Division
2,241 -

RFQ

MURS340S-E3/52T

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 75 ns 5 µA @ 400 V 400 V 3A -65°C ~ 175°C 1.45 V @ 3 A
BAV19W-E3-18

BAV19W-E3-18

DIODE GEN PURP 100V 250MA SOD123

Vishay General Semiconductor - Diodes Division
2,231 -

RFQ

BAV19W-E3-18

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 1.5pF @ 0V, 1MHz 50 ns 100 nA @ 100 V 100 V 250mA (DC) 150°C (Max) 1.25 V @ 200 mA
VS-50PF160

VS-50PF160

DIODE GEN PURP 1.6KV 50A DO203AB

Vishay General Semiconductor - Diodes Division
2,448 -

RFQ

VS-50PF160

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 1600 V 50A -55°C ~ 160°C 1.5 V @ 125 A
VS-T110HF40

VS-T110HF40

DIODE GEN PURP 400V 110A D-55

Vishay General Semiconductor - Diodes Division
2,406 -

RFQ

VS-T110HF40

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 20 mA @ 400 V 400 V 110A - -
VS-50PFR160

VS-50PFR160

DIODE GEN PURP 1.6KV 50A DO203AB

Vishay General Semiconductor - Diodes Division
2,345 -

RFQ

VS-50PFR160

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 1600 V 50A -55°C ~ 160°C 1.5 V @ 125 A
VS-70HFLR40S05

VS-70HFLR40S05

DIODE GEN PURP 400V 70A DO203AB

Vishay General Semiconductor - Diodes Division
3,319 -

RFQ

VS-70HFLR40S05

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 100 µA @ 400 V 400 V 70A -40°C ~ 125°C 1.85 V @ 219.8 A
VS-12FL40S05

VS-12FL40S05

DIODE GEN PURP 400V 12A DO203AA

Vishay General Semiconductor - Diodes Division
3,594 -

RFQ

VS-12FL40S05

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 50 µA @ 400 V 400 V 12A -65°C ~ 150°C 1.4 V @ 12 A
VS-12FLR40S05

VS-12FLR40S05

DIODE GEN PURP 400V 12A DO203AA

Vishay General Semiconductor - Diodes Division
3,859 -

RFQ

VS-12FLR40S05

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 50 µA @ 400 V 400 V 12A -65°C ~ 150°C 1.4 V @ 12 A
VS-88HF80

VS-88HF80

DIODE GEN PURP 800V 85A DO203AB

Vishay General Semiconductor - Diodes Division
3,462 -

RFQ

VS-88HF80

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 800 V 85A -65°C ~ 180°C 1.2 V @ 267 A
EGP10G-E3/54

EGP10G-E3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,629 -

RFQ

EGP10G-E3/54

Scheda tecnica

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -65°C ~ 150°C 1.25 V @ 1 A
UG4A-M3/73

UG4A-M3/73

DIODE GEN PURP 50V 4A DO201AD

Vishay General Semiconductor - Diodes Division
3,250 -

RFQ

UG4A-M3/73

Scheda tecnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 30 ns 5 µA @ 50 V 50 V 4A -55°C ~ 150°C 950 mV @ 4 A
UG4B-M3/73

UG4B-M3/73

DIODE GEN PURP 100V 4A DO201AD

Vishay General Semiconductor - Diodes Division
2,707 -

RFQ

UG4B-M3/73

Scheda tecnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 15 ns 5 µA @ 100 V 100 V 4A -55°C ~ 150°C 950 mV @ 4 A
BAT42W-HE3-18

BAT42W-HE3-18

DIODE SCHOTTKY 30V 200MA SOD123

Vishay General Semiconductor - Diodes Division
3,660 -

RFQ

BAT42W-HE3-18

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 7pF @ 1V, 1MHz 5 ns 500 nA @ 25 V 30 V 200mA (DC) 125°C (Max) 650 mV @ 50 mA
UG4C-M3/73

UG4C-M3/73

DIODE GEN PURP 150V 4A DO201AD

Vishay General Semiconductor - Diodes Division
2,181 -

RFQ

UG4C-M3/73

Scheda tecnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 30 ns 5 µA @ 150 V 150 V 4A -55°C ~ 150°C 950 mV @ 4 A
BAT43W-HE3-18

BAT43W-HE3-18

DIODE SCHOTTKY 30V 200MA SOD123

Vishay General Semiconductor - Diodes Division
3,923 -

RFQ

BAT43W-HE3-18

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 7pF @ 1V, 1MHz 5 ns 500 nA @ 25 V 30 V 200mA (DC) 125°C (Max) 450 mV @ 15 mA
UG4D-M3/73

UG4D-M3/73

DIODE GEN PURP 200V 4A DO201AD

Vishay General Semiconductor - Diodes Division
3,074 -

RFQ

UG4D-M3/73

Scheda tecnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 30 ns 5 µA @ 200 V 200 V 4A -55°C ~ 150°C 950 mV @ 4 A
Total 11674 Record«Prev1... 7879808182838485...584Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente