Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
U1B-M3/61T

U1B-M3/61T

DIODE GEN PURP 100V 1A DO214AC

Vishay General Semiconductor - Diodes Division
3,868 -

RFQ

U1B-M3/61T

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 6.8pF @ 4V, 1MHz 15 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 920 mV @ 1 A
V8PM6HM3/I

V8PM6HM3/I

RECTIFIER BARRIER SCHOTTKY TO-27

Vishay General Semiconductor - Diodes Division
2,072 -

RFQ

V8PM6HM3/I

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1150pF @ 4V, 1MHz - 600 µA @ 60 V 60 V 8A -40°C ~ 175°C 640 mV @ 8 A
RS3AHE3_A/I

RS3AHE3_A/I

DIODE GEN PURP 50V 3A DO214AB

Vishay General Semiconductor - Diodes Division
3,996 -

RFQ

RS3AHE3_A/I

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 44pF @ 4V, 1MHz 150 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1.3 V @ 2.5 A
RS3BHE3_A/I

RS3BHE3_A/I

DIODE GEN PURP 100V 3A DO214AB

Vishay General Semiconductor - Diodes Division
3,615 -

RFQ

RS3BHE3_A/I

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 44pF @ 4V, 1MHz 150 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 1.3 V @ 2.5 A
RS3DHE3_A/I

RS3DHE3_A/I

DIODE GEN PURP 200V 3A DO214AB

Vishay General Semiconductor - Diodes Division
3,593 -

RFQ

RS3DHE3_A/I

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 44pF @ 4V, 1MHz 150 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 1.3 V @ 2.5 A
RS3GHE3_A/I

RS3GHE3_A/I

DIODE GEN PURP 400V 3A DO214AB

Vishay General Semiconductor - Diodes Division
3,731 -

RFQ

RS3GHE3_A/I

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 44pF @ 4V, 1MHz 150 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 2.5 A
SS1FH6-M3/I

SS1FH6-M3/I

DIODE SCHOTTKY 60V 1A DO219AB

Vishay General Semiconductor - Diodes Division
2,552 -

RFQ

SS1FH6-M3/I

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 90pF @ 4V, 1MHz - 3 µA @ 60 V 60 V 1A -55°C ~ 175°C 700 mV @ 1 A
SS2FH6-M3/I

SS2FH6-M3/I

DIODE SCHOTTKY 60V 2A DO219AB

Vishay General Semiconductor - Diodes Division
2,903 -

RFQ

SS2FH6-M3/I

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 90pF @ 4V, 1MHz - 3 µA @ 60 V 60 V 2A -55°C ~ 175°C 780 mV @ 2 A
SS2FH6-M3/H

SS2FH6-M3/H

DIODE SCHOTTKY 60V 2A DO219AB

Vishay General Semiconductor - Diodes Division
2,191 -

RFQ

SS2FH6-M3/H

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 90pF @ 4V, 1MHz - 3 µA @ 60 V 60 V 2A -55°C ~ 175°C 780 mV @ 2 A
VS-T40HF120

VS-T40HF120

DIODE GEN PURP 1.2KV 40A D-55

Vishay General Semiconductor - Diodes Division
2,194 -

RFQ

VS-T40HF120

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 15 mA @ 1200 V 1200 V 40A - -
VS-85HFR80

VS-85HFR80

DIODE GEN PURP 800V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,221 -

RFQ

VS-85HFR80

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 9 mA @ 800 V 800 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-87HF80

VS-87HF80

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division
3,520 -

RFQ

VS-87HF80

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 400 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-87HFR80

VS-87HFR80

DIODE GEN PURP 800V 85A DO203AB

Vishay General Semiconductor - Diodes Division
3,408 -

RFQ

VS-87HFR80

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 800 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-71HFR100

VS-71HFR100

DIODE GEN PURP 1KV 70A DO203AB

Vishay General Semiconductor - Diodes Division
2,612 -

RFQ

VS-71HFR100

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 9 mA @ 1000 V 1000 V 70A -65°C ~ 180°C 1.35 V @ 220 A
VS-150U60D

VS-150U60D

DIODE GEN PURP 600V 150A DO205AA

Vishay General Semiconductor - Diodes Division
2,838 -

RFQ

VS-150U60D

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 600 V 150A -40°C ~ 180°C 1.47 V @ 600 A
RS1PB-M3/84A

RS1PB-M3/84A

DIODE GEN PURP 100V 1A DO220AA

Vishay General Semiconductor - Diodes Division
3,234 -

RFQ

RS1PB-M3/84A

Scheda tecnica

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 150 ns 1 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.3 V @ 1 A
RS1PJ-M3/84A

RS1PJ-M3/84A

DIODE GEN PURP 600V 1A DO220AA

Vishay General Semiconductor - Diodes Division
3,756 -

RFQ

RS1PJ-M3/84A

Scheda tecnica

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 250 ns 1 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
V2F6-M3/I

V2F6-M3/I

2A,60V,SMF,TRENCH SKY RECT.

Vishay General Semiconductor - Diodes Division
3,260 -

RFQ

V2F6-M3/I

Scheda tecnica

Tape & Reel (TR) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 250pF @ 4V, 1MHz - 480 µA @ 60 V 60 V 2A -40°C ~ 150°C 600 mV @ 2 A
VS-88HF100

VS-88HF100

DIODE GEN PURP 1KV 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,870 -

RFQ

VS-88HF100

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 1000 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-88HFR100

VS-88HFR100

DIODE GEN PURP 1KV 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,389 -

RFQ

VS-88HFR100

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 1000 V 85A -65°C ~ 180°C 1.2 V @ 267 A
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1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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